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Jeon, Sanghun
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1

Monolithically Integrated Complementary Ferroelectric FET X..:

Hwang, Junghyeon ; Joh, Hongrae ; Kim, Chaeheon..
ACS Applied Materials & Interfaces.  16 (2024)  2 - p. 2467-2476 , 2024
Link: https://doi.org/10.1021/..
 
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2

Monolithic three-dimensional hafnia-based artificial nerve ..:

Jung, Minhyun ; Kim, Seungyeob ; Hwang, Junghyeon...
Nano Energy.  126 (2024)  - p. 109643 , 2024
Link: https://doi.org/10.1016/..
 
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3

In situ grazing incidence synchrotron x-ray diffraction stu..:

Ahn, Dante ; Anoop, Gopinathan ; Lee, Jun Young...
Applied Physics Letters.  125 (2024)  3 - p. , 2024
Link: https://doi.org/10.1063/..
 
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4

Charge Trap Flash with Superior Program Efficiency by Negat..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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5

Unlocking the Potential of Hafnia Ferroelectrics: Achieving..:

Yang, Ketong ; Jung, Minhyun ; Jung, Taeseung...
ACS Applied Electronic Materials.  6 (2024)  7 - p. 5067-5076 , 2024
Link: https://doi.org/10.1021/..
 
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6

Flexible Artificial Mechanoreceptor Based on Microwave Anne..:

Jung, Minhyun ; Kim, Seungyeob ; Hwang, Junghyeon...
Advanced Electronic Materials.  10 (2024)  2 - p. , 2024
Link: https://doi.org/10.1002/..
 
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7

Novel Strategies Toward High-Performance FeFET for Computin..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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8

Effect of Annealing Temperature on Minimum Domain Size of F..:

Yun, Seokjung ; Kim, Hoon ; Seo, Myungsoo...
ACS Applied Electronic Materials.  6 (2024)  4 - p. 2134-2141 , 2024
Link: https://doi.org/10.1021/..
 
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9

A method of controlling the imprint effect in hafnia ferroe..:

Shin, Hunbeom ; Gaddam, Venkateswarlu ; Goh, Youngin...
Applied Physics Letters.  122 (2023)  2 - p. , 2023
Link: https://doi.org/10.1063/..
 
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10

Ultra-high Tunneling Electroresistance Ratio (2 × 104) & En..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Hwang, Junghyeon ; Kim, Chaeheon ; Shin, Hunbeom... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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11

Comprehensive Design Guidelines of Gate Stack for QLC and H..:

, In: 2023 International Electron Devices Meeting (IEDM),
Lim, Suhwan ; Kim, Taeyoung ; Myeong, Ilho... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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12

Physics, Structures, and Applications of Fluorite‐Structure..:

Hwang, Junghyeon ; Goh, Youngin ; Jeon, Sanghun
Small.  20 (2023)  9 - p. , 2023
Link: https://doi.org/10.1002/..
 
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13

Development of MFMIS Gatestack with Thick Hafnium Zirconium..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Kang, Bohyeon ; Park, Jongseo ; Hwang, Junghyeon... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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14

High Pressure Microwave Annealing Effect on Electrical Prop..:

Jung, Minhyun ; Kim, Chaeheon ; Hwang, Junghyeon...
ACS Applied Electronic Materials.  , 2023
Link: https://doi.org/10.1021/..
 
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15

Three-terminal vertical ferroelectric synaptic barristor en..:

Jang, Seonghoon ; Kim, Yongjun ; Jeon, Jihoon...
Journal of Alloys and Compounds.  965 (2023)  - p. 171247 , 2023
Link: https://doi.org/10.1016/..
 
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