E-LIB Suche - Ergebnisse für: Nanver, Lis K.

1

Identifying nano-Schottky diode currents in silicon diodes ..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),

Knezevic, Tihomir ; Nanver, Lis K - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

2

PureB diode fabrication using physical or chemical vapor de..:

Thammaiah, Shivakumar D. ; Liu, Xingyu ; Knežević, Tihomir...
Solid-State Electronics. 177 (2021) - p. 107938 , 2021

Link: https://doi.org/10.1016/..

3

Nanolayer boron-semiconductor interfaces and their device a..:

Nanver, Lis K. ; Qi, Lin ; Liu, Xingyu.
Solid-State Electronics. 186 (2021) - p. 108041 , 2021

Link: https://doi.org/10.1016/..

4

Optoelectrical Operation Stability of Broadband PureGaB Ge-..:

Krakers, Max ; Knežević, Tihomir ; Nanver, Lis K.
Journal of Electronic Materials. 50 (2021) 12 - p. 7026-7036 , 2021

Link: https://doi.org/10.1007/..

5

Nanometer-thin pure boron CVD layers as material barrier to..:

Shivakumar, D. Thammaiah ; Knežević, Tihomir ; Nanver, Lis K.
Journal of Materials Science: Materials in Electronics. 32 (2021) 6 - p. 7123-7135 , 2021

Link: https://doi.org/10.1007/..

6

Investigation of Pd/MoOx/n-Si diodes for bipolar transistor..:

Gupta, Gaurav ; D. Thammaiah, Shivakumar ; Nanver, Lis K..
Journal of Applied Physics. 128 (2020) 5 - p. , 2020

Link: https://doi.org/10.1063/..

7

Impact of ultra-thin-layer material parameters on the suppr..:

, In: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO),

Knezevic, Tihomir ; Suligoj, Tomislav ; Nanver, Lis K. - p. 24-29 , 2019

Link: https://doi.org/10.23919..

8

Indirect optical crosstalk reduction by highly-doped backsi..:

Osrečki, Željko ; Knežević, Tihomir ; Nanver, Lis K..
Optical and Quantum Electronics. 50 (2018) 3 - p. , 2018

Link: https://doi.org/10.1007/..

9

Opto-electronic modeling of light emission from avalanche-m..:

Dutta, Satadal ; Hueting, Raymond J. E. ; Annema, Anne-Johan...
Journal of Applied Physics. 118 (2015) 11 - p. , 2015

Link: https://doi.org/10.1063/..

10

PureB single-photon avalanche diodes for low-energy electro..:

Qi, Lin ; Sluyterman, S. ; Kooijman, K...
Optics Letters. 40 (2015) 3 - p. 300 , 2015

Link: https://doi.org/10.1364/..

11

Restricted-Access Al-Mediated Material Transport in Al Cont..:

Sammak, Amir ; Qi, Lin ; Nanver, Lis K.
Journal of Electronic Materials. 44 (2015) 12 - p. 4676-4683 , 2015

Link: https://doi.org/10.1007/..

12

Aluminum-induced iso-epitaxy of silicon for low-temperature..:

Sakic, Agata ; Qi, Lin ; Scholtes, Tom L.M...
Solid-State Electronics. 84 (2013) - p. 65-73 , 2013

Link: https://doi.org/10.1016/..

13

PureGaB p+n Ge diodes grown in large windows to Si with a s..:

Sammak, Amir ; Qi, Lin ; de Boer, Wiebe B..
Solid-State Electronics. 74 (2012) - p. 126-133 , 2012

Link: https://doi.org/10.1016/..

14

Boron-layer silicon photodiodes for high-efficiency low-ene..:

Šakić, Agata ; Nanver, Lis K. ; Scholtes, Tom L.M....
Solid-State Electronics. 65-66 (2011) - p. 38-44 , 2011

Link: https://doi.org/10.1016/..

15

Low-Complexity Full-Melt Laser-Anneal Process for Fabricati..:

Biasotto, Cleber ; Gonda, Viktor ; Nanver, Lis K....
Journal of Electronic Materials. 40 (2011) 11 - p. 2187-2196 , 2011

Link: https://doi.org/10.1007/..