Pogány, L.
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2

A common hard-failure mechanism in GaN HEMTs in accelerated..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Wieland, D. ; Ofner, S. ; Stabentheiner, M.... - p. 1-6 , 2023
 
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11

Modeling current transport in boron-doped diamond at high e..:

Lambert, N. ; Taylor, A. ; Hubík, P....
Diamond and Related Materials.  109 (2020)  - p. 108003 , 2020
 
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12

In-doped Sb nanowires grown by MOCVD for high speed phase c..:

Cecchini, R. ; Selmo, S. ; Wiemer, C....
Micro and Nano Engineering.  2 (2019)  - p. 117-121 , 2019
 
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13

The specific grain-boundary electrical resistivity of Ni:

Bakonyi, I. ; Isnaini, V.A. ; Kolonits, T....
Philosophical Magazine.  99 (2019)  9 - p. 1139-1162 , 2019
 
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14

Stress and Recovery Dynamics of Drain Current in GaN HD-GIT..:

Padovan, V. ; Koller, C. ; Pobegen, G...
Microelectronics Reliability.  100-101 (2019)  - p. 113482 , 2019
 
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