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Rampazzo, Fabiana
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1

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobil..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Saro, Marco ; de Pieri, Francesco ; Carlotto, Andrea... - p. 5B.2-1-5B.2-8 , 2024
Link: https://doi.org/10.1109/..
 
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2

Thermally-activated failure mechanisms of 0.25 \ \mu \mathr..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Gao, Zhan ; Chiocchetta, Francesca ; Rampazzo, Fabiana... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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3

Failure Physics and Reliability of GaN‐Based HEMTs for Micr..:

Zanoni, Enrico ; Rampazzo, Fabiana ; De Santi, Carlo...
physica status solidi (a).  219 (2022)  24 - p. , 2022
Link: https://doi.org/10.1002/..
 
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4

Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs:

, In: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
Chiocchetta, Francesca ; Calascione, Claudia ; De Santi, Carlo... - p. 90-94 , 2021
Link: https://doi.org/10.1109/..
 
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5

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:

Gao, Zhan ; Rampazzo, Fabiana ; Meneghini, Matteo...
Microelectronics Reliability.  126 (2021)  - p. 114318 , 2021
Link: https://doi.org/10.1016/..
 
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6

Short term reliability and robustness of ultra-thin barrier..:

Gao, ZHan ; Meneghini, Matteo ; Harrouche, Kathia...
Microelectronics Reliability.  123 (2021)  - p. 114199 , 2021
Link: https://doi.org/10.1016/..
 
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7

Reliability Physics of GaN HEMT Microwave Devices: The Age ..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Zanoni, Enrico ; Meneghini, Matteo ; Meneghesso, Gaudenzio... - p. 1-10 , 2020
Link: https://doi.org/10.1109/..
 
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8

Short Term Reliability and Robustness of ultra-thin barrier..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Gao, Zhan. ; Meneghini, Matteo. ; Harrouche, Kathia... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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9

Improved stability in wide-recess InP HEMTs by means of a f..:

Suemitsu, Tetsuya ; Fukai, Yoshino K. ; Tokumitsu, Masami...
IEICE Electronics Express.  3 (2006)  13 - p. 310-315 , 2006
Link: https://doi.org/10.1587/..
 
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10

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxia..:

Zanoni, Enrico ; Santi, Carlo De ; Gao, Zhan...
info:eu-repo/semantics/altIdentifier/wos/WOS:001087462000001.  , 2024
Link: https://hdl.handle.net/1..
 
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11

Short term reliability and robustness of ultra-thin barrier..:

Gao, Zhan ; Meneghini, Matteo ; Harrouche, Kathia...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199.  , 2021
Link: https://hal.science/hal-..
 
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12

Short term reliability and robustness of ultra-thin barrier..:

Gao, Zhan ; Meneghini, Matteo ; Harrouche, Kathia...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199.  , 2021
Link: https://hal.archives-ouv..
 
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13

Short term reliability and robustness of ultra-thin barrier..:

Gao, Zhan ; Meneghini, Matteo ; Harrouche, Kathia...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199.  , 2021
Link: https://hal.science/hal-..
 
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14

Short term reliability and robustness of ultra-thin barrier..:

Gao, Zhan ; Meneghini, Matteo ; Harrouche, Kathia...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199.  , 2021
Link: https://hal.science/hal-..
 
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15

Short term reliability and robustness of ultra-thin barrier..:

Gao, Zhan ; Meneghini, Matteo ; Harrouche, Kathia...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IPFA49335.2020.9260793.  , 2020
Link: https://hal.science/hal-..
 
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