E-LIB Suche - Ergebnisse für: Scholz, Ferdinand

1

Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN..:

Shahbaz, Jassim ; Scholz, Ferdinand
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

2

Optimisation of trench filling in GaN towards vertical HEMT..:

Scholz, Jan-Patrick ; Chen, Chen ; Scholz, Ferdinand
Journal of Crystal Growth. 587 (2022) - p. 126629 , 2022

Link: https://doi.org/10.1016/..

3

MOVPE growth of (In)AlGaN-based heterostructures for thin-f..:

Enslin, Johannes-Tobias , 2021

Link: https://nbn-resolving.de..

4

AlN base layers for UV LEDs:

Walde, Sebastian , 2021

Link: https://nbn-resolving.de..

5

Optimization of (In)GaN Heterostructures for Sensing Applic..:

Schneidereit, Martin F. ; Elnahal, Ahmed R. ; Iskander, Paulette...
physica status solidi (a). 218 (2020) 4 - p. , 2020

Link: https://doi.org/10.1002/..

6

Impact of Surface Chemistry and Doping Concentrations on Bi..:

Naskar, Nilanjon ; Schneidereit, Martin F. ; Huber, Florian...
Sensors. 20 (2020) 15 - p. 4179 , 2020

Link: https://doi.org/10.3390/..

7

Bio sensing with InGaN-heterostructures using a compact spe..:

Schneidereit, Martin F. ; Scholz, Ferdinand ; Huber, Florian...
Sensors and Actuators B: Chemical. 305 (2020) - p. 127189 , 2020

Link: https://doi.org/10.1016/..

8

Impact of High‐Temperature Annealing on Boron Containing Al..:

Rettig, Oliver ; Scholz, Ferdinand ; Li, Yueliang...
physica status solidi (a). 217 (2020) 16 - p. , 2020

Link: https://doi.org/10.1002/..

9

In-situ study of Ga2O3 thermal expansion and epitaxy by syn..:

Cheng, Zongzhe , 2019

Link: https://nbn-resolving.de..

10

MOVPE of Group‐III Heterostructures for Optoelectronic Appl..:

Scholz, Ferdinand
Crystal Research and Technology. 55 (2019) 2 - p. , 2019

Link: https://doi.org/10.1002/..

11

Performance Optimization of InGaN Based Quantum Well Struct..:

, In: 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC),

Adel, Faisal ; Omran, Haitham ; Schneidereit, Martin. - p. 1-1 , 2019

Link: https://doi.org/10.1109/..

12

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with..:

Riedmüller, Sandra ; Steinmann, Claudia ; Grünenpütt, Jan..
physica status solidi (a). 215 (2018) 8 - p. , 2018

Link: https://doi.org/10.1002/..

13

Investigation of Boron Containing AlN and AlGaN Layers Grow..:

Rettig, Oliver ; Scholz, Jan‐Patrick ; Steiger, Natja...
physica status solidi (b). 255 (2018) 5 - p. , 2018

Link: https://doi.org/10.1002/..

14

Nitride Semiconductors:

Gil, Bernard ; Duboz, Jean‐Yves ; Scholz, Ferdinand...
physica status solidi (a). 215 (2018) 9 - p. , 2018

Link: https://doi.org/10.1002/..

15

Nitride Semiconductors:

Gil, Bernard ; Duboz, Jean‐Yves ; Scholz, Ferdinand...
physica status solidi (b). 255 (2018) 5 - p. , 2018

Link: https://doi.org/10.1002/..