E-LIB Suche - Ergebnisse für: Yu, Guohao

1

In-Plane Radiation of Surface Plasmon Polaritons Excited by..:

Zhang, Ping ; Dong, Yin ; Li, Xubo...
Micromachines. 15 (2024) 6 - p. 723 , 2024

Link: https://doi.org/10.3390/..

2

Annealing Process on Metal–Oxide–Semiconductor Channel Prop..:

Zhou, Jiaan ; Yang, An ; Yu, Guohao...
physica status solidi (RRL) – Rapid Research Letters. , 2024

Link: https://doi.org/10.1002/..

3

An Enhancement-Mode Algan/GaN HEMT with Island-Ohmic p-GaN ..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Dai, Xinyue ; Jiang, Qimeng ; Feng, Chao... - p. 168-171 , 2024

Link: https://doi.org/10.1109/..

4

Monolithically Integrated Power Converter Based on Etching-..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Li, Ang ; Li, Fan ; Wang, Weisheng... - p. 374-377 , 2024

Link: https://doi.org/10.1109/..

5

High-performance GaN metal–insulator–semiconductor high ele..:

Huang, Qizhi ; Deng, Xuguang ; Zhang, Li...
Applied Physics Letters. 124 (2024) 23 - p. , 2024

Link: https://doi.org/10.1063/..

6

Improved Gate Stability of Metal–Insulator–Semiconductor-Hi..:

Li, Yu ; Zhou, Jiaan ; Xing, Runxian...
ACS Applied Electronic Materials. , 2024

Link: https://doi.org/10.1021/..

7

Polarization Properties in AlGaN/GaN HEMT-Array with a Shif..:

Xing, Runxian ; Zhang, Ping ; Guo, Hongyang...
Plasmonics. , 2024

Link: https://doi.org/10.1007/..

8

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semicond..:

Guo, Bohan ; Yu, Guohao ; Zhang, Li...
Crystals. 14 (2024) 3 - p. 253 , 2024

Link: https://doi.org/10.3390/..

9

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-H..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Li, Ang ; Wang, Weisheng ; Li, Fan... - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

10

Comparative Analysis of the GaN Nonpolar Plane Morphology b..:

Zhou, Jiaan ; Tang, Wenxin ; Ju, Tao...
ACS Applied Materials & Interfaces. 15 (2023) 21 - p. 26159-26165 , 2023

Link: https://doi.org/10.1021/..

11

Room temperature terahertz emission from biased AlGaN/GaN g..:

, In: 2023 24th International Vacuum Electronics Conference (IVEC),

Xing, Runxian ; Zhang, Ping ; Yu, Guohao... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

12

Simulation of RTD Material System:

, In: 2023 24th International Vacuum Electronics Conference (IVEC),

Rong, Weiming ; Zhang, Ping ; Yu, Guohao... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

13

Ethylene for carbon doping of GaN by atmospheric pressure m..:

Zhang, Li ; Dong, Zhongyuan ; Deng, Xuguang...
Materials Letters. 345 (2023) - p. 134475 , 2023

Link: https://doi.org/10.1016/..

14

Comparing Electrical Performance of Lateral GaN Schottky Ba..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Zhou, Jiaan ; Yu, Guohao ; Hao, Chunfeng. - p. 215-217 , 2023

Link: https://doi.org/10.1109/..

15

Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorina..:

Ding, Xiaoyu ; Song, Liang ; Yu, Guohao...
Materials Science in Semiconductor Processing. 162 (2023) - p. 107502 , 2023

Link: https://doi.org/10.1016/..