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Applied physics letters / publ. by the American Institute of Physics
2
Eliminating stacking faults in semi-polar GaN by AlN interl..:
, In:
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Physica status solidi
3
Semipolar GaInN/GaN light-emitting diodes grown on honeycom..:
, In:Copies:
Zentrale:Magazinturm-E02 15z phy 865 ja/22
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Applied physics letters / publ. by the American Institute of Physics
4
Analysis of point defects in AlN epilayers by cathodolumine..:
, In:Copies: Zentrale;
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Applied physics letters / publ. by the American Institute of Physics
5
A-plane GaN epitaxial lateral overgrowth structures
, In:growth domains, morphological defects, and impurity incorpo...
Copies: Zentrale;
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Applied physics letters / publ. by the American Institute of Physics
6
Time-resolved cathodoluminescence of Mg-doped GaN:
, In:Copies: Zentrale;
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Applied physics letters / publ. by the American Institute of Physics
7
Complex excitonic recombination kinetics in ZnO
, In:capture, relaxation, and recombination from steady state
Copies: Zentrale;
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Physica status solidi
9
AlInN/GaN based multi quantum well structures - growth and ..:
, In:Copies:
Zentrale:Magazinturm-E02 15z phy 865 ja/22
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Zeitschrift für Gerontologie + Geriatrie
10
Auswirkungen der erweiterten klinischen Diagnostik auf das ..:
, In:Copies:
Zentrale:Magazin Zs fb 6882