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Dobos, A B
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1

GaN Layers Grown by MOCVD on Composite SiC Substrate:

, In: Springer Proceedings in Physics; Microscopy of Semiconducting Materials 2007,
Tóth, L ; Dobos, L ; Pécz, B.. - p. 57-60 ,
Link: https://doi.org/10.1007/..
 
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Composite Substrates for GaN Growth:

, In: Springer Proceedings in Physics; Microscopy of Semiconducting Materials 2007,
Pécz, B ; Tóth, L ; Dobos, L... - p. 53-56 ,
Link: https://doi.org/10.1007/..
 
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