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He, Manyi
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1

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizin..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Chen, Zhengjia ; Xu, Hongyi ; He, Yufu... - p. 228-231 , 2024
Link: https://doi.org/10.1109/..
 
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2

Single-Event Effects in SiC Power MOSFET Induced by Pulsed-..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Ji, Manyi ; He, Yufu ; Xu, Hongyi... - p. 180-183 , 2024
Link: https://doi.org/10.1109/..
 
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