I agree that this site is using cookies. You can find further informations here.
X
Horiguchi, H.
43  results:
Bookchapter (Online) X
Search for persons X
?
1

Forksheet Field-Effect Transistors for Area Scaling and Gat..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mertens, H. ; Horiguchi, N. - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
?
2

Side and Corner Region Non-Uniformities in Grown SiO2 and T..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Bastos, J. P. ; O'Sullivan, B. J. ; Higashi, Y.... - p. P36.PI-1-P36.PI-7 , 2024
Link: https://doi.org/10.1109/..
 
?
3

CMOS Scaling by Nanosheet Device Architectures and Backside..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Horiguchi, N. ; Mertens, H. ; Ritzenthaler, R.... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
?
4

Towards Improved Nanosheet-Based Complementary Field Effect..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Chiarella, T. ; Matagne, P. ; Mertens, H.... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
?
5

Backside Power Delivery: Game Changer and Key Enabler of Ad..:

, In: 2023 International Electron Devices Meeting (IEDM),
Veloso, A. ; Vermeersch, B. ; Chen, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
6

Nanosheet-based Complementary Field-Effect Transistors (CFE..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Mertens, H. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
?
7

3D Stacked Devices and MOL Innovations for Post-Nanosheet C..:

, In: 2023 International Electron Devices Meeting (IEDM),
Horiguchi, N. ; Mertens, H. ; Chiarella, T.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
8

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
?
9

Molybdenum Nitride as a Scalable and Thermally Stable pWFM ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Arimura, H. ; Brus, S. ; Franco, J.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
?
10

Novel Low Thermal Budget CMOS RMG: Performance and Reliabil..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Franco, J. ; Arimura, H. ; de Marneffe, J.-F.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
?
11

Integration of a Stacked Contact MOL for Monolithic CFET:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vega-Gonzalez, Victor ; Radisic, D. ; Chan, Bt... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
?
12

Impact of Backside Power Delivery Network with Buried Power..:

, In: 2023 45th Annual EOS/ESD Symposium (EOS/ESD),
Serbulova, K. ; Chen, S.-H. ; Hellings, G.... - p. 1-6 , 2023
Link: https://doi.org/10.23919..
 
?
13

Low temperature source/drain epitaxy and functional silicid..:

, In: 2022 International Electron Devices Meeting (IEDM),
Porret, C. ; Everaert, J.-L. ; Schaekers, M.... - p. 34.1.1-34.1.4 , 2022
Link: https://doi.org/10.1109/..
 
?
14

Semi-damascene Integration of a 2-layer MOL VHV Scaling Boo..:

, In: 2022 International Electron Devices Meeting (IEDM),
Vega-Gonzalez, V. ; Radisic, D. ; Choudhury, S.... - p. 23.2.1-23.2.4 , 2022
Link: https://doi.org/10.1109/..
 
?
15

Enabling Active Backside Technology for ESD and LU Reliabil..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Serbulova, K. ; Chen, S.-H. ; Hellings, G.... - p. 431-432 , 2022
Link: https://doi.org/10.1109/..
 
1-15