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Hu, Aixi
1
results:
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1
Stress Reliability Study of GaN HEMT Devices:
, In:
2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications( AEECA)
,
Zhang, Aixi
;
He, Yandong
;
He, Jin
... - p. 500-504 , 2020
Link:
https://doi.org/10.1109/..
1-1
