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Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering ,
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Optimized Design of Trench Termination for High-Voltage β-G..:
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2023 5th International Conference on Power and Energy Technology (ICPET) ,
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Simulation Study on SEB Resistance of Silicon-based RESURF ..:
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2023 IEEE 20th International Symposium on Biomedical Imaging (ISBI) ,
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Automated Region Learning Via Cell-Level Labels to Modify C..:
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Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering ,
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Improvement of reverse recovery characteristics through int..:
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2023 5th International Conference on Power and Energy Technology (ICPET) ,
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Effect of Back-P-Region on Reverse Recovery Oscillation Sup..:
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Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering ,
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Design and simulation study of multi-trench termination for..:
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2022 4th International Conference on Power and Energy Technology (ICPET) ,
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Design and Simulation of 1.2kV SiC Super-junction SBD with ..:
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Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering ,
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Simulation study of 1200V SiC-based trench-gate MOSFET with..:
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Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering ,
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A 4H-SiC Trench MOSFET with the vertical field plate couple..:
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Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering ,
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3D Simulation Study of Single Event Sensitivity for 200V Pl..:
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2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS) ,
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Oxide Damage Induced Leakage Current Degradation in SiC MOS..:
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Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering ,
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Investigation of Anti-SEB Capability of 160 V Power MOSFET ..:
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2020 IEEE 5th Information Technology and Mechatronics Engineering Conference (ITOEC) ,
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Short-circuit Failure Mechanism of SiC Double-trench MOSFET:
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Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering ,
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Electrical Parameters Degradation of E-mode GaN Under Repea..:
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2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE) ,
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