Hu, Dongqing
19  results:
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1

Optimized Design of Trench Termination for High-Voltage β-G..:

, In: Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering,
Zhang, Shiyu ; Hu, Dongqing ; Zhou, Xintian.. - p. 66-72 , 2023
 
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2

Simulation Study on SEB Resistance of Silicon-based RESURF ..:

, In: 2023 5th International Conference on Power and Energy Technology (ICPET),
Jiang, Jiaye ; Hu, Dongqing ; Li, Rongjia... - p. 198-205 , 2023
 
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3

Automated Region Learning Via Cell-Level Labels to Modify C..:

, In: 2023 IEEE 20th International Symposium on Biomedical Imaging (ISBI),
Hu, Dongqing ; Li, Hansheng ; Kang, Yuxin... - p. 1-5 , 2023
 
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4

Improvement of reverse recovery characteristics through int..:

, In: Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering,
Zhang, Kang ; Wu, Yu ; Hu, Dongqing.. - p. 1601-1608 , 2023
 
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5

Effect of Back-P-Region on Reverse Recovery Oscillation Sup..:

, In: 2023 5th International Conference on Power and Energy Technology (ICPET),
Zou, Hongyu ; Wu, Yu ; He, Feng... - p. 211-216 , 2023
 
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6

Design and simulation study of multi-trench termination for..:

, In: Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering,
Zhao, Chongning ; Hu, Dongqing ; Zheng, Yuechao... - p. 498-502 , 2022
 
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7

Design and Simulation of 1.2kV SiC Super-junction SBD with ..:

, In: 2022 4th International Conference on Power and Energy Technology (ICPET),
Lu, Xiangluan ; Jia, Yunpeng ; Zhou, Xintian... - p. 242-246 , 2022
 
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8

Simulation study of 1200V SiC-based trench-gate MOSFET with..:

, In: Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering,
Zheng, Yuechao ; Hu, Dongqing ; Zhao, Chongning... - p. 605-610 , 2022
 
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9

A 4H-SiC Trench MOSFET with the vertical field plate couple..:

, In: Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering,
Wang, Wangda ; Hu, Dongqing ; Zhou, Xintian.. - p. 617-622 , 2022
 
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10

3D Simulation Study of Single Event Sensitivity for 200V Pl..:

, In: Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering,
Li, Ting ; Hu, Dongqing ; Jia, Yunpeng.. - p. 1520-1525 , 2021
 
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11

Oxide Damage Induced Leakage Current Degradation in SiC MOS..:

, In: 2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Zhou, Xintian ; Zhang, Shida ; Jia, Yunpeng... - p. 1-4 , 2021
 
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12

Investigation of Anti-SEB Capability of 160 V Power MOSFET ..:

, In: Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering,
Yang, Wanting ; Hu, Dongqing ; Zhou, Xintian... - p. 22-27 , 2021
 
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13

Short-circuit Failure Mechanism of SiC Double-trench MOSFET:

, In: 2020 IEEE 5th Information Technology and Mechatronics Engineering Conference (ITOEC),
Hu, Dongqing ; Xia, Tian ; Zhou, Xintian... - p. 691-694 , 2020
 
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14

Electrical Parameters Degradation of E-mode GaN Under Repea..:

, In: Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering,
Sun, Lei ; Hu, DongQing ; Zhou, XinTian.. - p. 986-990 , 2020
 
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15

Degradation Characteristics of Enhancement-Mode Gallium Nit..:

, In: 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE),
Hu, Dongqing ; Luo, Xiaokang ; Zhou, Xintian - p. 157-160 , 2019
 
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