Huang, Chun-Te
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1

Duckiepond: An Open Education and Research Environment for ..:

, In: 2019 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS),
Lin, Ni-Ching ; Benjamin, Michael ; Chen, Chi-Fang... - p. 7219-7226 , 2019
 
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5

A 2.4 GHz, -19 dBm Sensitivity RF Energy Harvesting CMOS Ch..:

, In: 2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
Yan, Jing-Ren ; Huang, Yao-Wei ; Lai, Wei-Jen... - p. 43-46 , 2024
 
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6

Nanosheet Extensions and Beyond:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Tu, Chien-Te ; Liu, Yi-Chun ; Chen, Yu-Rui... - p. 1-1 , 2023
 
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7

First Demonstration of Monolithic Self-aligned Heterogeneou..:

, In: 2023 International Electron Devices Meeting (IEDM),
Tu, Chien-Te ; Hsieh, Wan-Hsuan ; Chen, Yu-Rui... - p. 1-4 , 2023
 
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8

First Stacked Nanosheet FeFET Featuring Memory Window of 1...:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Chen, Yu-Rui ; Liu, Yi-Chun ; Zhao, Zefu... - p. 1-2 , 2023
 
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9

Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into G..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Liu, Yi-Chun ; Chen, Yu-Rui ; Chen, Yun-Wen... - p. 1-2 , 2023
 
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10

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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11

First Demonstration of Highly Scaled Atomic Layer Deposited..:

, In: 2023 International Electron Devices Meeting (IEDM),
Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon... - p. 1-4 , 2023
 
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12

Taiwanese Hakka Across Taiwan Corpus and Formosa Speech Rec..:

, In: 2023 26th Conference of the Oriental COCOSDA International Committee for the Co-ordination and Standardisation of Speech Databases and Assessment Techniques (O-COCOSDA),
 
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13

Effects of In/Zn composition on the Performance of Ultra-th..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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14

Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-$\kappa$ ..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Chen, Yu-Rui ; Tu, Chien-Te ; Zhao, Zefu... - p. 1-2 , 2023
 
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15

6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels ..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
 
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