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Jang, Seung Yup
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1

Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Mancini, Stephen A. ; Jang, Seung Yup ; Binder, Andrew... - p. 339-342 , 2024
Link: https://doi.org/10.1109/..
 
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2

600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MO..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jang, Seung Yup ; Mancini, Stephen A. ; Sung, Woongje - p. 335-338 , 2024
Link: https://doi.org/10.1109/..
 
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3

Improved Blocking and Switching Characteristics of Split-Ga..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 350-353 , 2023
Link: https://doi.org/10.1109/..
 
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4

Enhanced Conduction and Switching Performance of 1.2 kV 4H-..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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5

First Demonstration of 600 V 4H-SiC Lateral Bi-Directional ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jang, Seung Yup ; Isukapati, Sundar Babu ; Kim, Dongyoung. - p. 5-8 , 2023
Link: https://doi.org/10.1109/..
 
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6

Static, Dynamic, and Short-circuit Characteristics of Split..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Kim, Dongyoung ; DeBoer, Skylar ; Mancini, Stephen A... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

Enhanced Design Architecture to Suppress Leakage Current of..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Isukapati, Sundar Babu ; Jang, Seung Yup ; Sung, Woongje - p. 358-361 , 2023
Link: https://doi.org/10.1109/..
 
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8

Edge Termination Design Considerations for 1.2kV 4H-SiC MOS..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Mancini, Stephen A ; Jang, Seung Yup ; Chen, Zeyu... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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9

Implementation of a short channel (0.3 μm) for 4H-SiC MOSFE..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kim, Dongyoung ; Jang, Seung Yup ; Morgan, Adam J.. - p. 217-220 , 2022
Link: https://doi.org/10.1109/..
 
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10

A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV ..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 54-57 , 2022
Link: https://doi.org/10.1109/..
 
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11

A New Layout Method for Junction Field Effect Transistors (..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Lynch, Justin ; Yun, Nick ; Jang, Seung Yup.. - p. 127-131 , 2022
Link: https://doi.org/10.1109/..
 
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12

A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Lynch, Justin ; Mancini, Steve ; deBoer, Skylar... - p. 124-127 , 2024
Link: https://doi.org/10.1109/..
 
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13

Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integr..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Mancini, Stephen A. ; Yup Jang, Seung ; Kim, Dongyoung. - p. 11-16 , 2022
Link: https://doi.org/10.1109/..
 
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14

Area-Efficient High-Voltage (HV) Lateral MOSFETs for Discre..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Isukapati, Sundar Babu ; Yup Jang, Seung ; Sung, Woongje - p. 122-126 , 2022
Link: https://doi.org/10.1109/..
 
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15

Portable Diffuse Reflectance Spectroscopy for Non-Invasive ..:

, In: 2023 IEEE International Opportunity Research Scholars Symposium (ORSS),
Romine, Mark ; Moazzen, Alex ; Luong, Linh.. - p. 63-66 , 2023
Link: https://doi.org/10.1109/..
 
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