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Latyshev, A. V
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1

Intrusions of the Kulumbe River Valley, NW Siberian Traps P..:

, In: Springer Geophysics; Recent Advances in Rock Magnetism, Environmental Magnetism and Paleomagnetism,
Latyshev, A. V. ; Krivolutskaya, N. A. ; Ulyahina, P. S... - p. 67-82 , 2018
Link: https://doi.org/10.1007/..
 
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2

List of Contributors:

, In: Advances in Semiconductor Nanostructures,
Akhundov, I.O. ; Aliev, V.Sh. ; Alperovich, V.L.... - p. xv-xxi , 2017
Link: https://doi.org/10.1016/..
 
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3

Surface Morphologies Obtained by Ge Deposition on Bare and ..:

, In: Advances in Semiconductor Nanostructures,
Shklyaev, A.A. ; Romanyuk, K.N. ; Kosolobov, S.S.. - p. 325-344 , 2017
Link: https://doi.org/10.1016/..
 
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4

Atomic Processes on the Silicon Surface:

, In: Advances in Semiconductor Nanostructures,
Latyshev, A.V. ; Fedina, L.I. ; Kosolobov, S.S.... - p. 189-221 , 2017
Link: https://doi.org/10.1016/..
 
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5

Superminiature Radiation Sources Based on Semiconductor Nan..:

, In: Advances in Semiconductor Nanostructures,
Haisler, V.A. ; Haisler, A.V. ; Derebezov, I.A.... - p. 437-461 , 2017
Link: https://doi.org/10.1016/..
 
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6

Molecular Beam Epitaxy of Cd x Hg 1−x Te:

, In: Advances in Semiconductor Nanostructures,
Sidorov, Yu.G. ; Anciferov, A.P. ; Varavin, V.S.... - p. 297-323 , 2017
Link: https://doi.org/10.1016/..
 
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7

Formation of GaAs Step-Terraced Surfaces by Annealing in Eq..:

, In: Advances in Semiconductor Nanostructures,
Alperovich, V.L. ; Akhundov, I.O. ; Kazantsev, D.M.... - p. 255-277 , 2017
Link: https://doi.org/10.1016/..
 
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8

Preface:

, In: Advances in Semiconductor Nanostructures,
Latyshev, A.V. ; Dvurechenskii, A.V. ; Aseev, A.L. - p. xxiii-xxiv , 2017
Link: https://doi.org/10.1016/..
 
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9

Atomic Structure of Semiconductor Low-Dimensional Heterosys..:

, In: Advances in Semiconductor Nanostructures,
Gutakovskii, A.K. ; Latyshev, A.V. ; Aseev, A.L. - p. 223-253 , 2017
Link: https://doi.org/10.1016/..
 
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10

Universality of the {113} Habit Plane in Si for Mixed Aggre..:

, In: Advances in Semiconductor Nanostructures,
Fedina, L.I. ; Gutakovskii, A.K. ; Latyshev, A.V.. - p. 383-407 , 2017
Link: https://doi.org/10.1016/..
 
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11

On the mechanism of {113}-defect formation in Si:

, In: Springer Proceedings in Physics; Microscopy of Semiconducting Materials,
Fedina, L I ; Song, S A ; Chuvilin, A L.. - p. 359-362 ,
Link: https://doi.org/10.1007/..
 
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12

Effective CH4 and C2H5OH Gas Sensor Created on the Basis of..:

, In: 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP),
Perekrestov, V. I. ; Komyushchenko, A. S. ; Latyshev, V. M. - p. 1-4 , 2018
Link: https://doi.org/10.1109/..
 
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13

Formation of DNA molecules ordered systems on silicon surfa..:

, In: International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices,
Matkhonova, Erzhena Y. ; Utkin, Dmitriy E. ; Kozhukhov, Anton S.... - p. 13-15 , 2012
Link: https://doi.org/10.1109/..
 
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14

The change of the phase diagram n(T) of Peierls conductors ..:

, In: International Conference on Science and Technology of Synthetic Metals,
Latyshev, Yu.I. ; Minakova, V.E. - p. 589 , 1994
Link: https://doi.org/10.1109/..
 
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