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Proceedings of the Second International Symposium of Chinese CHI ,
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Effects of interface interactivity on collecting language d..:
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2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) ,
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U-MRAM PUF: A Novel Unipolar-MRAM for Power and Area Effici..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
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Structure and Performance Co-optimization for the Developme..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
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Design of High-RA STT-MRAM for Future Energy-Efficient In-M..:
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Lecture Notes in Computer Science; Innovative Technologies and Learning ,
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Solving the Self-regulated Learning Problem: Exploring the ..:
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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
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U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0..:
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2022 International Conference on Computational Science and Computational Intelligence (CSCI) ,
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Cloud-Based Sepsis Prediction System with Neural Architectu..:
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2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
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The thermal stability improvement of spin-orbit-torque (SOT..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
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A 4K–400K Wide Operating-Temperature-Range MRAM Technology ..:
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2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
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An 8kb spin-orbit-torque magnetic random-access memory:
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2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
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Fabrication and device characterization of large linear dyn..:
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2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
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Low-environmental-interference & highly-sensitive TMR biose..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
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A Comprehensive Modeling Framework for Ferroelectric Tunnel..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
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