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Lee, Jen-yao
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1

Si Multi-Bridge Channel CMOS Inverter with Five Stacked Lay..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Chang, Wei-Yuan ; Luo, Guang-Li ; Chu, Chun-Lin... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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2

High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Wu, Cheng-Yu ; Ruan, Dun-Bao ; Chang-Liao, Kuei-Shu... - p. 23-24 , 2023
Link: https://doi.org/10.23919..
 
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3

Investigation on Polarization and Trapping Dominated Reliab..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Hong, Tzu-Chieh ; Su, Chun-Jung ; Lee, Yao-Jen... - p. 241-243 , 2022
Link: https://doi.org/10.1109/..
 
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4

Investigation on selectively etched SiGe and Si surface for..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Chang, Wei-Yuan ; Chu, Chun-Lin ; Luo, Guang-Li... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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5

Surface Modulation of SiGe by Hydrogen Plasma Process with ..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Ishii, Yohei ; Sugano, Ryoko ; Lee, Yao-Jen... - p. 345-347 , 2022
Link: https://doi.org/10.1109/..
 
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6

SiGe and Si Gate-All-Around FET Fabricated by Selective Etc..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Chang, Wei-Yuan ; Luo, Guang-Li ; Huang, Yi-Shuo... - p. 21-23 , 2022
Link: https://doi.org/10.1109/..
 
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7

Investigation of Ge channel Complemental Field Effect Trans..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Hong, Tzu-Chieh ; Yu, Sin-Ren ; Su, Chun-Jung.. - p. 244-246 , 2022
Link: https://doi.org/10.1109/..
 
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8

Neuromorphic Computing with Fe-FinFETs in the Presence of V..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
De, Sourav ; Baig, Md. Aftab ; Qiu, Bo-Han... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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9

Extraction of Ultra-Low Contact Resistivity by End-Resistan..:

, In: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS),
Tsui, Bing-Yue ; Lee, Ya-Hsin ; Wu, Dong-Ying.. - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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10

Tri-Gate Ferroelectric FET Characterization and Modelling f..:

, In: 2020 Device Research Conference (DRC),
De, Sourav ; Baig, Md. Aftab ; Qiu, Bo-Han... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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11

Process and Structure Considerations for the Post FinFET Er:

, In: 2020 IEEE Silicon Nanoelectronics Workshop (SNW),
Su, Chun-Jung ; Sung, Po-Jung ; Kao, Kuo-Hsing... - p. 13-14 , 2020
Link: https://doi.org/10.1109/..
 
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12

Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with ..:

, In: 2019 19th International Workshop on Junction Technology (IWJT),
Borland, John ; Chaung, Shang-Shuin ; Tseng, Tseung-Yuen... - p. 1-4 , 2019
Link: https://doi.org/10.23919..
 
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13

Investigation of microwave assisted annealing on AP-PECVD f..:

, In: 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO),
Wu, Chien-Hung ; Huang, Bo-Wen ; Chang, Kow-Ming... - p. 176-179 , 2016
Link: https://doi.org/10.1109/..
 
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14

Impacts of precursor flow rate and temperature of PECVD-SiN..:

, In: 2007 International Semiconductor Device Research Symposium,
Lu, Ching-Sen ; Lin, Horng-Chih ; Lee, Yao-Jen. - p. None , 2007
Link: https://doi.org/10.1109/..
 
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15

U-MRAM PUF: A Novel Unipolar-MRAM for Power and Area Effici..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Shih, Ching ; Hong, Ming-Chun ; Wang, Chih-Yao... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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