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Linten, Dimitri
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1

HBM and CDM ESD Performance of Advanced Silicon Photonic Co..:

, In: 2021 43rd Annual EOS/ESD Symposium (EOS/ESD),
Chen, Shih-Hung ; Karp, James ; Simicic, Marko... - p. 1-7 , 2021
Link: https://doi.org/10.23919..
 
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2

On the impact of Gate field-plate length and barrier layer ..:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),
Lin, Chien-Yu ; Putcha, Vamsi ; Alian, Alireza... - p. 1-7 , 2020
Link: https://doi.org/10.1109/..
 
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3

A Compact Physics Analytical Model for Hot-Carrier Degradat..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Tyaginov, Stanislav ; Grill, Alexander ; Vandemaele, Michiel... - p. 1-7 , 2020
Link: https://doi.org/10.1109/..
 
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4

Technology Impact on the Low Frequency Noise of Si and Si/S..:

, In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT),
Claeys, Cor ; Hellings, Geert ; Arimura, Hiroaki... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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5

Defect-Based Compact Modeling of Random Telegraph Noise:

, In: Noise in Nanoscale Semiconductor Devices,
Weckx, Pieter ; Kaczer, Ben ; Simicic, Marko.. - p. 517-552 , 2020
Link: https://doi.org/10.1007/..
 
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6

Understanding and empirical fitting the breakdown of MgO in..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Van Beek, Simon ; O'Sullivan, Barry J. ; Couet, Sebastien... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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7

Impact of interface layer on charge trapping in Si:HfO2 bas..:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),
Jung, Taehwan ; O'Sullivan, Barry ; Ronchi, Nicolo... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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8

Relevance of fin dimensions and high-pressure anneals on ho..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Chasin, Adrian ; Franco, Jacopo ; Bury, Erik... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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9

Compact Model of the Entire I-V Characteristic for Accurate..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Truijen, Brecht ; Franco, Jacopo ; Roussel, Philippe J.. - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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10

Transient Overshoot of Sub-10nm Bulk FinFET ESD Diodes with..:

, In: 2019 41st Annual EOS/ESD Symposium (EOS/ESD),
Chen, Shih-Hung ; Horiguchi, Naoto ; Linten, Dimitri... - p. 1-8 , 2019
Link: https://doi.org/10.23919..
 
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11

A physics-aware compact modeling framework for transistor a..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Wu, Zhicheng ; Linten, Dimitri ; Kaczer, Ben... - p. 21.2.1-21.2.4 , 2019
Link: https://doi.org/10.1109/..
 
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12

Low-Impedance Contact CDM – Evaluation and Modeling:

, In: 2019 41st Annual EOS/ESD Symposium (EOS/ESD),
Simicic, Marko ; Wu, Wei-Min ; Chen, Shih-Hung... - p. 1-9 , 2019
Link: https://doi.org/10.23919..
 
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13

Reliability in Stacked Gate-All-Around Si Nanowire Devices:..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Chasin, Adrian ; Horiguchi, Naoto ; Linten, Dimitri... - p. 1-8 , 2019
Link: https://doi.org/10.1109/..
 
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14

On Correlation between Hot-Carrier Stress Induced Device Pa..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Makarov, Alexander ; Roussel, Philippe ; Bury, Erik... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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15

Hot-carrier analysis on nMOS Si FinFETs with solid source d..:

, In: 2016 IEEE International Reliability Physics Symposium (IRPS),
Chasin, Adrian ; Franco, Jacopo ; Ritzenthaler, Romain... - p. 4B-4-1-4B-4-6 , 2016
Link: https://doi.org/10.1109/..
 
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