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2023 China Semiconductor Technology International Conference (CSTIC) ,
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Cell Structure and Process Integration of a Novel 2T0C Tech..:
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2023 International Electron Devices Meeting (IEDM) ,
2
Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C ..:
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2023 International Electron Devices Meeting (IEDM) ,
3
First Demonstration of Stacked 2T0C-DRAM Bit-Cell Construct..:
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2023 IEEE International Memory Workshop (IMW) ,
4
A 3D Stackable 1T1C DRAM: Architecture, Process Integration..:
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2023 IEEE International Memory Workshop (IMW) ,
5
Dielectric Relaxation Performance of DRAM Storage Capacitor..:
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2022 International Electron Devices Meeting (IEDM) ,
6
First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel ..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
7
Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Le..:
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2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ,
8
Using compact model to verify IGZO RO performance for engin..:
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2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ,
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TCAD Simulation Performance of VGAA for 4F2 High Density DR..:
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Man-Machine-Environment System Engineering; Lecture Notes in Electrical Engineering ,
10
Research on Recognizable Physiological Signals of Workers W..:
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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) ,
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Comparison of NBTI kinetics in RMG Si p-FinFETs featuring A..:
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2016 IEEE International Electron Devices Meeting (IEDM) ,
12
FOI FinFET with ultra-low parasitic resistance enabled by f..:
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