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Park, Boyoung
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1

Interface Engineering of Trench-Ox for Modern DRAM Devices:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Hwang, Soojung ; Kim, Jongkyu ; Kim, Juntae... - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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2

14nm DRAM Development and Manufacturing:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Kim, Kanguk ; Son, Youngwoo ; Ryu, Hoin... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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3

Embedded STT-MRAM in 28-nm FDSOI Logic Process for Industri..:

, In: 2018 IEEE Symposium on VLSI Technology,
Lee, Yong Kyu ; Jung, Hyunsung ; Lee, Kilho... - p. 181-182 , 2018
Link: https://doi.org/10.1109/..
 
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4

A Pulsed Fast Neutron Analysis for the Detection of Plastic..:

, In: Recent Advances in Multidisciplinary Applied Physics,
Ko, Seung-Kook ; Park, Su-Yeol ; Lee, Bo-Young. - p. 757-763 , 2005
Link: https://doi.org/10.1016/..
 
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5

Local-damascene-finFET DRAM integration with p/sup +/ doped..:

, In: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.,
Kim, Yong-Sung ; Lee, Eun-Cheol ; Song, Bo-Young... - p. 315-318 , 2005
Link: https://doi.org/10.1109/..
 
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