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Rodwell, M. J. W.
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1

IC and Array Technologies for 100-300GHz Wireless:

, In: 2022 IEEE Custom Integrated Circuits Conference (CICC),
Rodwell, M. J. W ; Ahmed, A. S. H. ; Seo, M.... - p. 01-05 , 2022
Link: https://doi.org/10.1109/..
 
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2

Optical Phase-Locking and Wavelength Synthesis:

, In: 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),
Rodwell, M. J. W. ; Park, H. C. ; Piels, M.... - p. 1-4 , 2014
Link: https://doi.org/10.1109/..
 
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3

III-V MOSFETs: Scaling laws, scaling limits, fabrication pr..:

, In: 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM),
Rodwell, M. J. W. ; Shin, B. ; Lee, Yong-ju... - p. 1-6 , 2010
Link: https://doi.org/10.1109/..
 
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4

Direct Electro-Optic Sampling of Analog and Digital GaAs In..:

, In: 1985 IEEE GaAs IC Symposium Technical Digest,
Freeman, J. L. ; Weingarten, K. J. ; Rodwell, M. J. W.... - p. 147-150 , 1985
Link: https://doi.org/10.1109/..
 
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5

In/sub 0.53/Ga/sub 0.47/As/InP type-I DHBTs having 450 GHz ..:

, In: 63rd Device Research Conference Digest, 2005. DRC '05.,
Liu, Amy W.K. ; Fastenau, Joel M. ; Wu, Ying... - p. 265,266 , 2005
Link: https://doi.org/10.1109/..
 
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6

>300GHz fixed-frequency and voltage-controlled fundamental ..:

, In: 2010 IEEE MTT-S International Microwave Symposium,
Seo, M. ; Urteaga, M. ; Young, A.... - p. 1-1 , 2010
Link: https://doi.org/10.1109/..
 
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7

THz MMICs based on InP HBT Technology:

, In: 2010 IEEE MTT-S International Microwave Symposium,
Hacker, J. ; Seo, M. ; Young, A. C.... - p. 1-1 , 2010
Link: https://doi.org/10.1109/..
 
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8

Simulation of Electron Transport in High-Mobility MOSFETs: ..:

, In: 2007 IEEE International Electron Devices Meeting,
Fischetti, M. V. ; Wang, L. ; Yu, B.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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9

An ultra-low power InAs/AlSb HEMT W-band low-noise amplifie:

, In: IEEE MTT-S International Microwave Symposium Digest, 2005.,
Hacker, J.B. ; Bergman, J. ; Nagy, G.... - p. 1029,1030,1031,1032 , 2005
Link: https://doi.org/10.1109/..
 
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10

Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Ap..:

, In: 2023 Device Research Conference (DRC),
Whitaker, Logan ; Markman, Brian ; Rodwell, Mark J.W. - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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11

A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB N:

, In: 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
Soylu, Utku ; Alizadeh, Amirreza ; Seo, Munkyo. - p. 85-88 , 2023
Link: https://doi.org/10.1109/..
 
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12

D-Band Power Amplifier with 27 dBm Peak Output Power and 14..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Alizadeh, Amirreza ; Soylu, Utku ; Sharma, Navneet.. - p. 94-97 , 2023
Link: https://doi.org/10.1109/..
 
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13

A 202 GHz Link Using Planar Transceiver Modules:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Soylu, Utku ; Alizadeh, Amirreza ; Seo, Munkyo.. - p. 280-283 , 2023
Link: https://doi.org/10.1109/..
 
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14

A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 d..:

, In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC),
Soylu, Utku ; Alizadeh, Amirreza ; Ahmed, Ahmed S. H... - p. 1-4 , 2023
Link: https://doi.org/10.23919..
 
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15

A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Soylu, Utku ; Alizadeh, Amirreza ; Seo, Munkyo. - p. 191-194 , 2022
Link: https://doi.org/10.1109/..
 
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