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2020 IEEE Symposium on VLSI Technology ,
1
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosh..:
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2020 IEEE Symposium on VLSI Technology ,
2
Record Low Contact Resistivity to Ge:B $(8.1\mathrm{x}10^{-..:
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2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
3
Infrared Response of Stacked GeSn Transistors:
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2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ,
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Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA ..:
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2019 IEEE International Electron Devices Meeting (IEDM) ,
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First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Comp..:
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2019 Symposium on VLSI Technology ,
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First Vertically Stacked, Compressively Strained, and Trian..:
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45th European Conference on Optical Communication (ECOC 2019) ,
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Transmission of probabilistically shaped 100 GBd DP-16QAM o..:
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2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) ,
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Implementation of Multi-process Automatic Loading and Unloa..:
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2015 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) ,
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Mitigating effects of non-ideal synaptic device characteris..:
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Proceedings of the IEEE/ACM International Conference on Computer-Aided Design ,
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Mitigating Effects of Non-ideal Synaptic Device Characteris..:
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2024 10th International Conference on Applied System Innovation (ICASI) ,
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