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2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ,
1
TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor..:
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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
2
22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarte..:
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2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) ,
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A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology:
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2022 International Electron Devices Meeting (IEDM) ,
4
Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G appli..:
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2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ,
5
280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW,..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
6
$\text{In}_{x}\text{Ga}_{1-x}\text{As}$ quantum-well high-e..:
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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
7
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110..:
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2020 IEEE Symposium on VLSI Circuits ,
8
A 293/440 GHz Push-Push Double Feedback Oscillators with 5...:
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2020 IEEE International Solid- State Circuits Conference - (ISSCC) ,
9
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Ar..:
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2022 27th Asia Pacific Conference on Communications (APCC) ,
10
The Effect of PEG-Lifting Order on the Performance of Proto..:
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2017 International Conference on Rehabilitation Robotics (ICORR) ,
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Development of an intrafascicular neural interface for peri..:
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2023 7th International Conference on System Reliability and Safety (ICSRS) ,
15
A New Temperature and Luminance Combined Degradation Model ..:
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1-15
