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Zheng, Zheyang
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1

A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Tra..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Yang, Yingchen ; Feng, Sirui ; Zhou, Zongjie... - p. 343-346 , 2024
Link: https://doi.org/10.1109/..
 
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2

Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gr..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Han, Zhao ; Hao, Weibing ; Liu, Jinyang... - p. 232-235 , 2024
Link: https://doi.org/10.1109/..
 
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3

Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Sun, Jiahui ; Shu, Ji ; Zheng, Zheyang. - p. 271-274 , 2024
Link: https://doi.org/10.1109/..
 
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4

Vertical Leakage and Back-Gating Characteristics of GaN HEM..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zheng, Zheyang ; Liao, Hang ; Feng, Sirui... - p. 291-294 , 2024
Link: https://doi.org/10.1109/..
 
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5

The Role of Line-Shaped Defects in Premature Breakdown of $..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Liu, Jinyang ; Li, Qiuyan ; Han, Zhao... - p. 196-199 , 2024
Link: https://doi.org/10.1109/..
 
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6

A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),
Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang. - p. 724-728 , 2024
Link: https://doi.org/10.1109/..
 
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7

Impact of Inadequate Mg Activation on Dynamic Threshold Vol..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Sun, Jiahui ; Zheng, Zheyang ; Zhang, Li... - p. 24-27 , 2023
Link: https://doi.org/10.1109/..
 
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8

Conductivity Enhancement Induced by Confined Vicinal Hole S..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Liao, Hang ; Zheng, Zheyang ; Chen, Tao... - p. 231-234 , 2023
Link: https://doi.org/10.1109/..
 
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9

Protection of SiC MOSFET from Negative Gate Voltage Spikes ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang. - p. 199-202 , 2023
Link: https://doi.org/10.1109/..
 
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10

Suppressing the Reverse Recovery of Si Super-Junction MOSFE..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang. - p. 131-134 , 2023
Link: https://doi.org/10.1109/..
 
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11

High Dynamic Stability in Enhancement-Mode Active-Passivati..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Wu, Yanlin ; Nuo, Muqin ; Yang, Junjie... - p. 378-381 , 2023
Link: https://doi.org/10.1109/..
 
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12

HyFET—A GaN/SiC Hybrid Field-Effect Transistor:

, In: 2023 International Electron Devices Meeting (IEDM),
Feng, Sirui ; Zheng, Zheyang ; Wang, Yuru... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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13

Bipolar p-FET with Enhanced Conduction Capability on E-mode..:

, In: 2023 International Electron Devices Meeting (IEDM),
Tang, Jinjin ; Jiang, Zuoheng ; Wang, Chengcai... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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14

Switching Performance of GaN $p$-FET-bridge (PFB-) HEMTs St..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Chen, Junting ; Chen, Tao ; Jiang, Zuoheng... - p. 107-110 , 2023
Link: https://doi.org/10.1109/..
 
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15

Correlation between Pulse I-V and Human Body Model (HBM) Te..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Sun, Jiahui ; Zheng, Zheyang ; Zhang, Li. - p. 73-76 , 2022
Link: https://doi.org/10.1109/..
 
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