Zhou, Qi-Xin
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1

Threshold voltage instability of p-GaN Gate HEMT in 48-12V ..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Wang, Kaidi ; Huang, Shuting ; Xiong, Qi... - p. 248-251 , 2024
 
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2

A Novel E-Mode GaN p-MISFET with Hole Compensation Effect A..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Chen, Kuangli ; Huang, Shuting ; Wang, Haochen... - p. 315-318 , 2024
 
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3

An Integrated Low-Power Enhanced Pull-Up GaN Driver Using S..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zhuang, Chun-Wang ; Ming, Xin ; Ye, Zi-Kai... - p. 351-354 , 2024
 
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4

A High-Speed Dual-NMOSFETs Output Stage Buffer with Charge-..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Qin, Yao ; Ming, Xin ; Lin, Zhi-yi... - p. 470-473 , 2024
 
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5

Contributors:

, In: Human Reproductive and Prenatal Genetics,
Aggarwal, Vimla ; Barber, T.M. ; Becker, Christian M.... - p. xiii-xix , 2023
 
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6

A Touchscreen Force Detection Scheme Based on Transfer Lear..:

, In: 2023 3rd International Conference on Frontiers of Electronics, Information and Computation Technologies (ICFEICT),
Zhu, Xiangxian ; Lou, Yilun ; Zhou, Qi... - p. 15-20 , 2023
 
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7

Sleuth: A Trace-Based Root Cause Analysis System for Large-..:

, In: Proceedings of the 28th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, Volume 4,
Gan, Yu ; Liu, Guiyang ; Zhang, Xin... - p. 324-337 , 2023
 
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8

Total-Ionizing-Dose Radiation Induced Gate Damage in High V..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Wang, Zhao ; Zhou, Xin ; Wu, Zhonghua... - p. 119-122 , 2023
 
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9

A Fully-integrated GaN Driver for Time-of-flight Lidar Appl..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Ming, Xin ; Ye, Zi-Kai ; Lin, Zhi-Yi... - p. 169-172 , 2022
 
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10

A GaN HEMT Gate Driver IC with Programmable Turn-on dV/dt C..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Ming, Xin ; Li, Xiang-jun ; Zhang, Zhi-wen... - p. 98-101 , 2020
 
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11

A Low Input Capacitance p-GaN Gate HEMT with Split Source-F..:

, In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT),
Wang, Fangzhou ; Chen, Wanjun ; Xu, Xiaorui... - p. 1-3 , 2020
 
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12

An Ultralow Loss N-channel RB-IGBT with P-drift Region:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Xu, Xiaorui ; Chen, Wanjun ; Wang, Fangzhou... - p. 455-458 , 2020
 
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13

Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Xin, Yajie ; Chen, Wanjun ; Sun, Ruize... - p. 317-320 , 2020
 
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14

Lightweight Design of Valve Body Structure Based on Numeric..:

, In: Sustainable Design and Manufacturing 2020; Smart Innovation, Systems and Technologies,
Zhou, Qi ; Zhao, Gang ; Huang, Xin.. - p. 485-496 , 2020
 
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15

A Novel Self-Regulated Potential SOI LIGBT With Low ON-Stat..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Xia, Yun ; Chen, Wanjun ; Gao, Wuhao... - p. 403-406 , 2019
 
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