I agree that this site is using cookies. You can find further informations
here
.
X
Login
My folder (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
Show Desktop-Version
Toggle navigation
Clement Wann, H.
180
results:
Online X
Search for persons
X
Format
Online (180)
Mediatypes
Articles (Online) (176)
Bookchapter (Online) (4)
Languages
english (162)
french (1)
Sorted by: Relevance
Sorted by: Year
?
1
MOSFET carrier mobility model based on gate oxide thickness..:
Chen, Kai
;
Clement Wann, H.
;
Dunster, Jon
...
Solid-State Electronics. 39 (1996) 10 - p. 1515-1518 , 1996
Link:
https://doi.org/10.1016/..
?
2
Experimental Demonstration of (111)-Oriented GaAs Metal–Oxi..:
Han, Tsung-Yu
;
Luo, Guang-Li
;
Cheng, Chao-Ching
...
ECS Journal of Solid State Science and Technology. 3 (2014) 4 - p. P86-P90 , 2014
Link:
https://doi.org/10.1149/..
?
3
Comparative analysis of hole transport in compressively str..:
Agrawal, Ashish
;
Barth, Michael
;
Madan, Himanshu
...
Applied Physics Letters. 105 (2014) 5 - p. , 2014
Link:
https://doi.org/10.1063/..
?
4
Band alignment study of lattice-matched InAlP and Ge using ..:
Owen, Man Hon Samuel
;
Guo, Cheng
;
Chen, Shu-Han
...
Applied Physics Letters. 103 (2013) 3 - p. , 2013
Link:
https://doi.org/10.1063/..
?
5
Improvement of defect reduction in semi-polar GaN grown on ..:
Lee, Ling
;
Chien, Kun-Feng
;
Chou, Wu-Ching
...
CrystEngComm. 14 (2012) 13 - p. 4486 , 2012
Link:
https://doi.org/10.1039/..
?
6
Optical Studies of GaAs Nanowires Grown on Trenched Si(001)..:
Lee, Ling
;
Chien, Kun-Feng
;
Fan, Wen-Chung
...
Japanese Journal of Applied Physics. 51 (2012) 6S - p. 06FG15 , 2012
Link:
https://doi.org/10.1143/..
?
7
Optical Studies of GaAs Nanowires Grown on Trenched Si(001)..:
Lee, Ling
;
Chien, Kun-Feng
;
Fan, Wen-Chung
...
Japanese Journal of Applied Physics. 51 (2012) 6S - p. 06FG15 , 2012
Link:
https://doi.org/10.7567/..
?
8
Nearly Dislocation-free Ge/Si Heterostructures by Using Nan..:
Luo, Guang-Li
;
Ko, Chih-Hsin
;
Wann, Clement H.
...
Physics Procedia. 25 (2012) - p. 105-109 , 2012
Link:
https://doi.org/10.1016/..
?
9
Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs ..:
Gong, Xiao
;
Ivana
;
Chin, Hock-Chun
...
Electrochemical and Solid-State Letters. 14 (2011) 3 - p. H117 , 2011
Link:
https://doi.org/10.1149/..
?
10
Single Crystalline GaN Epitaxial Layer Prepared on Nano-Pat..:
Huang, C. C.
;
Chang, S. J.
;
Kuo, C. H.
...
Journal of The Electrochemical Society. 158 (2011) 6 - p. H626-H629 , 2011
Link:
https://doi.org/10.1149/..
?
11
Reduction of Off-State Leakage Current in In0.7Ga0.3As Chan..:
Zhang, Xingui
;
Guo, Huaxin
;
Lin, Hau-Yu
...
Electrochemical and Solid-State Letters. 14 (2011) 5 - p. H212 , 2011
Link:
https://doi.org/10.1149/..
?
12
Influences of surface reconstruction on the atomic-layer-de..:
Lin, Hau-Yu
;
Wu, San-Lein
;
Cheng, Chao-Ching
...
Applied Physics Letters. 98 (2011) 12 - p. , 2011
Link:
https://doi.org/10.1063/..
?
13
In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned..:
Zhang, Xingui
;
Guo, Huaxin
;
Gong, Xiao
...
Electrochemical and Solid-State Letters. 14 (2011) 2 - p. H60 , 2011
Link:
https://doi.org/10.1149/..
?
14
III–V MOSFETs with a new self-aligned contact:
, In:
2010 Symposium on VLSI Technology
,
Zhang, Xingui
;
Guo, Huaxin
;
Ko, Chih-Hsin
... - p. 233-234 , 2010
Link:
https://doi.org/10.1109/..
?
15
High crystalline quality Ge grown by MOCVD inside narrow sh..:
Vellianitis, G.
;
van Dal, M.J.H.
;
Duriez, B.
...
Journal of Crystal Growth. 383 (2013) - p. 9-11 , 2013
Link:
https://doi.org/10.1016/..
1-15