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Raffel, Yannick
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1

Enhanced reliability and trapping behavior in ferroelectric..:

, In: 2024 IEEE International Memory Workshop (IMW),
Lederer, Maximilian ; Muller, Franz ; Hoffmann, Raik... - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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2

Lattice Scattering Related Flicker Noise in Silicon-Doped H..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Hessler, Daniel ; Olivo, Ricardo ; Seidel, Konrad... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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3

Dopant-Dependent Flicker Noise of Hafnium Oxide Ferroelectr..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Hessler, Daniel ; Olivo, Ricardo ; Seidel, Konrad... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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4

Efficient Characterization Methodology for Low-Frequency No..:

, In: 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS),
Pirro, Luca ; Chohan, Talha ; Liebscher, Philipp... - p. 1-5 , 2024
Link: https://doi.org/10.1109/..
 
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5

Improvement of low-frequency noise behavior with chloridic ..:

Hessler, Daniel ; Olivo, Ricardo ; Baldauf, Tim...
Memories - Materials, Devices, Circuits and Systems.  7 (2024)  - p. 100095 , 2024
Link: https://doi.org/10.1016/..
 
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6

Ferroelectric Field Effect Transistors–Based Content‐Addres..:

Sunil, Athira ; Rana SK, Masud ; Lederer, Maximilian...
Advanced Intelligent Systems.  6 (2024)  4 - p. , 2024
Link: https://doi.org/10.1002/..
 
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7

Spike-Time Dependent Plasticity in HfO₂-Based Ferroelectric..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Masud Rana, Sk ; Roy, Sourodeep ; Lederer, Maximilian... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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8

Low-Frequency Noise Sources and Back-Gate Coupling Effects ..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
Yadav, Nandakishor ; Raffel, Yannick ; Olivo, Ricardo Revello... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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9

28nm HKMG 1F-1R2 Multilevel Memory for Inference Engine App..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
De, Sourav ; Muller, Franz ; Lederer, Maximilian... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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10

Demonstration of Large Polarization in Si-doped HfO2 Metal–..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Hsuen, Jing-Hua ; Lederer, Maximillian ; Kerkhofs, Lars... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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11

Impact of High-K Deposition Process on the Noise Immunity o..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
Raffel, Yannick ; Olivo, Ricardo ; Lederer, Maximilian... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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12

Demonstration of Differential Mode FeFET-Array for multi-pr..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Parmar, Vivek ; Muller, Franz ; Hsuen, Jing-Hua... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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13

Hafnium oxide-based Ferroelectric Memories: Are we ready fo..:

, In: 2023 IEEE International Memory Workshop (IMW),
Seidel, Konrad ; Lehninger, David ; Muller, Franz... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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14

An experimental comparison of interface trap density in haf..:

Woo, Chaiwon ; Raffel, Yannick ; Olivo, Ricardo..
Memories - Materials, Devices, Circuits and Systems.  6 (2023)  - p. 100091 , 2023
Link: https://doi.org/10.1016/..
 
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15

Ferroelectric Content-Addressable Memory Cells with IGZO Ch..:

Sk, Masud Rana ; Thunder, Sunanda ; Lehninger, David...
ACS Applied Electronic Materials.  5 (2023)  2 - p. 812-820 , 2023
Link: https://doi.org/10.1021/..
 
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