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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
1
A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Tra..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
5
Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gr..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
8
Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
9
Vertical Leakage and Back-Gating Characteristics of GaN HEM..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
10
The Role of Line-Shaped Defects in Premature Breakdown of $..:
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2024 IEEE Applied Power Electronics Conference and Exposition (APEC) ,
13
A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on..:
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
14
Impact of Inadequate Mg Activation on Dynamic Threshold Vol..:
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
15