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Arthur, Steve
332
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1
Optimization of Holding Current in 4H-SiC Thyristors:
Soloviev, Stanislav
;
Elasser, Ahmed
;
Katz, Sarah
...
Materials Science Forum. 740-742 (2013) - p. 994-997 , 2013
Link:
https://doi.org/10.4028/..
?
2
Design, Yield and Process Capability Study of 8 kV 4H-SiC P..:
Bolotnikov, Alexander
;
Losee, Peter A.
;
Matocha, Kevin
...
Materials Science Forum. 717-720 (2012) - p. 953-956 , 2012
Link:
https://doi.org/10.4028/..
?
3
4kV Silicon Carbide MOSFETs:
Stum, Zachary
;
Bolotnikov, A.V.
;
Losee, Peter A.
...
Materials Science Forum. 679-680 (2011) - p. 637-640 , 2011
Link:
https://doi.org/10.4028/..
?
4
3kV 4H-SiC Thyristors for Pulsed Power Applications:
Elasser, Ahmed
;
Losee, Peter A.
;
Arthur, Steve
...
Materials Science Forum. 645-648 (2010) - p. 1053-1056 , 2010
Link:
https://doi.org/10.4028/..
?
5
100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules:
Losee, Peter A.
;
Matocha, Kevin
;
Arthur, Steve
...
Materials Science Forum. 615-617 (2009) - p. 899-902 , 2009
Link:
https://doi.org/10.4028/..
?
6
950 Volt 4H-SiC MOSFETs: DC and Transient Performance and G..:
Matocha, Kevin
;
Stum, Zachary
;
Arthur, Steve
..
Materials Science Forum. 600-603 (2008) - p. 1131-1134 , 2008
Link:
https://doi.org/10.4028/..
?
7
Determination of Impact Ionization Coefficients Measured fr..:
Loh, W.S.
;
Johnson, C. Mark
;
Ng, J.S.
...
Materials Science Forum. 556-557 (2007) - p. 339-342 , 2007
Link:
https://doi.org/10.4028/..
?
8
Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 S..:
Matocha, Kevin
;
Tucker, Jesse
;
Arthur, Steve
...
Materials Science Forum. 556-557 (2007) - p. 819-822 , 2007
Link:
https://doi.org/10.4028/..
?
9
Structural Properties and Electrical Characteristics of Hom..:
Cao, X.A.
;
Larsen, M.
;
Lu, H.
.
Materials Science Forum. 527-529 (2006) - p. 1541-1544 , 2006
Link:
https://doi.org/10.4028/..
?
10
4H-SiC DMOSFETs Processed Using Graphite Capped Implant Act..:
Fedison, Jeffery B.
;
Cowen, Chris S.
;
Garrett, Jerome L.
...
Materials Science Forum. 527-529 (2006) - p. 1265-1268 , 2006
Link:
https://doi.org/10.4028/..
?
11
Effect of Crystal Defects on Reverse I-V Characteristics of..:
Soloviev, Stanislav I.
;
Sandvik, Peter M.
;
Arthur, Steve
...
Materials Science Forum. 527-529 (2006) - p. 427-430 , 2006
Link:
https://doi.org/10.4028/..
?
12
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diod..:
Twigg, Mark E.
;
Stahlbush, Robert E.
;
Fatemi, M.
...
Materials Science Forum. 457-460 (2004) - p. 537-542 , 2004
Link:
https://doi.org/10.4028/..
?
13
Propagation of Current-Induced Stacking Faults and Forward ..:
Stahlbush, Robert E.
;
Fedison, Jeffery B.
;
Arthur, Steve
...
Materials Science Forum. 389-393 (2002) - p. 427-430 , 2002
Link:
https://doi.org/10.4028/..
?
14
Diversity of nitrogen isotopes and protein status in caribo..:
Gustine, David D.
;
Barboza, Perry S.
;
Lawler, James P.
...
Journal of Mammalogy. 93 (2012) 3 - p. 778-790 , 2012
Link:
https://www.jstor.org/st..
?
15
Diversity of nitrogen isotopes and protein status in caribo..:
Gustine, David D.
;
Barboza, Perry S.
;
Lawler, James P.
...
Journal of Mammalogy. 93 (2012) 3 - p. 778-790 , 2012
Link:
https://doi.org/10.1644/..
1-15