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Bi, Da-Wei
6902
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1
Metastable Electron Traps in Modified Silicon-on-Insulator ..:
Dai, Li-Hua
;
Bi, Da-Wei
;
Zhang, Zheng-Xuan
...
Chinese Physics Letters. 35 (2018) 5 - p. 056101 , 2018
Link:
https://doi.org/10.1088/..
?
2
Influence of characteristics' measurement sequence on total..:
Xie, Xin
;
Bi, Da-Wei
;
Hu, Zhi-Yuan
...
Chinese Physics B. 27 (2018) 12 - p. 128501 , 2018
Link:
https://doi.org/10.1088/..
?
3
Research on the radiation hardened SOI devices with single-..:
Dai, Li-Hua
;
Bi, Da-Wei
;
Hu, Zhi-Yuan
...
Chinese Physics B. 27 (2018) 4 - p. 048503 , 2018
Link:
https://doi.org/10.1088/..
?
4
Enhanced radiation-induced narrow channel effects in 0.13-$..:
Zhang, Meng-Ying
;
Hu, Zhi-Yuan
;
Bi, Da-Wei
..
Chinese Physics B. 27 (2018) 2 - p. 028501 , 2018
Link:
https://doi.org/10.1088/..
?
5
Influence of Tilted Angle on Effective Linear Energy Transf..:
Zhang, Le-Qing
;
Lu, Jian
;
Xu, Jia-Ling
...
Chinese Physics Letters. 34 (2017) 11 - p. 118504 , 2017
Link:
https://doi.org/10.1088/..
?
6
Total ionizing dose induced single transistor latchup in 13..:
Fan, Shuang
;
Hu, Zhi-Yuan
;
Zhang, Zheng-Xuan
...
Chinese Physics B. 26 (2017) 3 - p. 036103 , 2017
Link:
https://doi.org/10.1088/..
?
7
Utilizing a shallow trench isolation parasitic transistor t..:
Peng, Chao
;
Hu, Zhi-Yuan
;
Ning, Bing-Xu
...
Chinese Physics B. 23 (2014) 9 - p. 090702 , 2014
Link:
https://doi.org/10.1088/..
?
8
Enhanced Radiation Sensitivity in Short-Channel Partially D..:
Peng, Chao
;
Zhang, Zheng-Xuan
;
Hu, Zhi-Yuan
...
Chinese Physics Letters. 30 (2013) 9 - p. 098502 , 2013
Link:
https://doi.org/10.1088/..
?
9
The Enhanced Role of Shallow-Trench Isolation in Ionizing R..:
Huang, Hui-Xiang
;
Bi, Da-Wei
;
Peng, Chao
..
Chinese Physics Letters. 30 (2013) 8 - p. 080701 , 2013
Link:
https://doi.org/10.1088/..
?
10
Bias dependence of a deep submicron NMOSFET response to tot..:
Liu, Zhang-Li
;
Hu, Zhi-Yuan
;
Zhang, Zheng-Xuan
...
Chinese Physics B. 20 (2011) 7 - p. 070701 , 2011
Link:
https://doi.org/10.1088/..
?
11
Impact of substrate bias on radiation-induced edge effects ..:
Hu, Zhi-Yuan
;
Liu, Zhang-Li
;
Zhang, Zheng-Xuan
...
Chinese Physics B. 20 (2011) 12 - p. 120702 , 2011
Link:
https://doi.org/10.1088/..
?
12
Enhanced Total Ionizing Dose Susceptibility in Narrow Chann..:
Liu, Zhang-Li
;
Hu, Zhi-Yuan
;
Zhang, Zheng-Xuan
...
Chinese Physics Letters. 28 (2011) 7 - p. 070701 , 2011
Link:
https://doi.org/10.1088/..
?
13
Total ionizing dose effect in an input/output device for fl..:
Liu, Zhang-Li
;
Hu, Zhi-Yuan
;
Zhang, Zheng-Xuan
...
Chinese Physics B. 20 (2011) 12 - p. 120703 , 2011
Link:
https://doi.org/10.1088/..
?
14
Radiation induced inter-device leakage degradation:
Hu, Zhi-Yuan
;
Liu, Zhang-Li
;
Shao, Hua
...
Chinese Physics C. 35 (2011) 8 - p. 769-773 , 2011
Link:
https://doi.org/10.1088/..
?
15
Radiation response of pseudo-MOS transistors fabricated in ..:
Da-Wei, Bi
;
Zheng-Xuan, Zhang
;
Shuai, Zhang
...
Chinese Physics C. 33 (2009) 10 - p. 866-869 , 2009
Link:
https://doi.org/10.1088/..
1-15