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Bollaert, S.
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1

Impact ionization and band-to-band tunneling in InxGa1-xAs ..:

Vasallo, B. G. ; González, T. ; Talbo, V....
Journal of Applied Physics.  123 (2018)  3 - p. , 2018
Link: https://doi.org/10.1063/..
 
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2

Static and low frequency noise characterization of ultra-th..:

Karatsori, T.A. ; Pastorek, M. ; Theodorou, C.G....
Solid-State Electronics.  143 (2018)  - p. 56-61 , 2018
Link: https://doi.org/10.1016/..
 
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3

Study of the oxidation at the Al2O3/GaSb interface after NH..:

Lechaux, Y. ; Fadjie-Djomkam, A. B. ; Pastorek, M....
Journal of Applied Physics.  124 (2018)  17 - p. , 2018
Link: https://doi.org/10.1063/..
 
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4

Impact of oxygen plasma postoxidation process on Al2O3/n-In..:

Lechaux, Y. ; Fadjie-Djomkam, A. B. ; Bollaert, S..
Applied Physics Letters.  109 (2016)  13 - p. , 2016
Link: https://doi.org/10.1063/..
 
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5

Improvement of interfacial and electrical properties of Al2..:

Lechaux, Y ; Fadjie, A ; Bollaert, S...
Journal of Physics: Conference Series.  647 (2015)  - p. 012062 , 2015
Link: https://doi.org/10.1088/..
 
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6

Monte Carlo model for the analysis and development of III-V..:

Talbo, V ; Mateos, J ; González, T...
Journal of Physics: Conference Series.  647 (2015)  - p. 012056 , 2015
Link: https://doi.org/10.1088/..
 
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7

Threshold voltage study of scaled self‐aligned In0.53Ga0.47..:

Dehzangi, A. ; Razip Wee, M.F. Mohd ; Wichmann, N....
Micro & Nano Letters.  9 (2014)  3 - p. 180-183 , 2014
Link: https://doi.org/10.1049/..
 
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8

Interfacial X‐ray photospectrometry study of In0.53Ga0.47As..:

Mohd Razip Wee, M.F. ; Dehzangi, A. ; Wichmann, N...
Micro & Nano Letters.  8 (2013)  11 - p. 836-840 , 2013
Link: https://doi.org/10.1049/..
 
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9

Electrical characterization of In0.53Ga0.47As/In0.52Al0.48A..:

Shi, J. ; Wichmann, N. ; Roelens, Y..
Applied Physics Letters.  102 (2013)  24 - p. , 2013
Link: https://doi.org/10.1063/..
 
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10

Terahertz emission induced by optical beating in nanometer-..:

Nouvel, P. ; Torres, J. ; Blin, S....
Journal of Applied Physics.  111 (2012)  10 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52A..:

Shi, J. ; Wichmann, N. ; Roelens, Y..
Applied Physics Letters.  99 (2011)  20 - p. , 2011
Link: https://doi.org/10.1063/..
 
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12

Three-terminal junctions operating as mixers, frequency dou..:

Iñiguez-de-la-Torre, I ; González, T ; Pardo, D...
Semiconductor Science and Technology.  25 (2010)  12 - p. 125013 , 2010
Link: https://doi.org/10.1088/..
 
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13

Terahertz response of InGaAs field effect transistors in qu..:

Klimenko, O. A. ; Mityagin, Yu. A. ; Videlier, H....
Applied Physics Letters.  97 (2010)  2 - p. , 2010
Link: https://doi.org/10.1063/..
 
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14

Anisotropic transport properties in InAs/AlSb heterostructu..:

Moschetti, G. ; Zhao, H. ; Nilsson, P.-Å....
Applied Physics Letters.  97 (2010)  24 - p. , 2010
Link: https://doi.org/10.1063/..
 
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15

Influence of the branches width on the nonlinear output cha..:

Iñiguez-de-la-Torre, I. ; González, T. ; Pardo, D....
Journal of Applied Physics.  105 (2009)  9 - p. , 2009
Link: https://doi.org/10.1063/..
 
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