I agree that this site is using cookies. You can find further informations
here
.
X
Login
My folder (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
Show Desktop-Version
Toggle navigation
De Santi, C.
760
results:
Articles (Online) X
Search for persons
X
Languages
english (689)
more...
french (11)
italian (1)
spanish (1)
portuguese (1)
less...
Sorted by: Relevance
Sorted by: Year
?
1
Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Cap..:
Marcuzzi, A.
;
Avramenko, M.
;
De Santi, C.
...
Materials Science in Semiconductor Processing. 177 (2024) - p. 108389 , 2024
Link:
https://doi.org/10.1016/..
?
2
Review and Outlook on GaN and SiC Power Devices: Industrial..:
Buffolo, M.
;
Favero, D.
;
Marcuzzi, A.
...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1344-1355 , 2024
Link:
https://doi.org/10.1109/..
?
3
Impact of Mg-doping on the performance and degradation of A..:
Piva, F.
;
Grigoletto, M.
;
Brescancin, R.
...
Applied Physics Letters. 122 (2023) 15 - p. , 2023
Link:
https://doi.org/10.1063/..
?
4
Trade-off between gate leakage current and threshold voltag..:
Favero, D.
;
De Santi, C.
;
Stockman, A.
...
Microelectronics Reliability. 150 (2023) - p. 115129 , 2023
Link:
https://doi.org/10.1016/..
?
5
Early failure of high-power white LEDs for outdoor applicat..:
Caria, A.
;
Fraccaroli, R.
;
Pierobon, G.
...
Microelectronics Reliability. 150 (2023) - p. 115142 , 2023
Link:
https://doi.org/10.1016/..
?
6
A novel in-situ approach to monitor the variations in the o..:
Cavaliere, A.
;
De Santi, C.
;
Meneghesso, G.
..
Microelectronics Reliability. 150 (2023) - p. 115199 , 2023
Link:
https://doi.org/10.1016/..
?
7
Impact of high-temperature operating lifetime tests on the ..:
Pilati, M.
;
Buffolo, M.
;
Rampazzo, F.
...
Microelectronics Reliability. 150 (2023) - p. 115131 , 2023
Link:
https://doi.org/10.1016/..
?
8
Screening medical students for SARS-CoV-2 to facilitate fac..:
De Santi, C.
;
Cavalleri, G.L.
;
Kerrigan, S.W.
...
Journal of Hospital Infection. 135 (2023) - p. 1-3 , 2023
Link:
https://doi.org/10.1016/..
?
9
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means ..:
Piva, F.
;
Pilati, M.
;
Buffolo, M.
...
Applied Physics Letters. 122 (2023) 18 - p. , 2023
Link:
https://doi.org/10.1063/..
?
10
Threshold voltage instability in SiO2-gate semi-vertical Ga..:
Fregolent, M.
;
Del Fiol, A.
;
De Santi, C.
...
Microelectronics Reliability. 150 (2023) - p. 115130 , 2023
Link:
https://doi.org/10.1016/..
?
11
Bias-dependent degradation of single quantum well on InGaN-..:
Casu, C.
;
Buffolo, M.
;
Caria, A.
...
Microelectronics Reliability. 150 (2023) - p. 115132 , 2023
Link:
https://doi.org/10.1016/..
?
12
Comparison between Cu(In,Ga)Se2 solar cells with different ..:
Bertoncello, M.
;
Barbato, M.
;
Caria, A.
...
Microelectronics Reliability. 138 (2022) - p. 114612 , 2022
Link:
https://doi.org/10.1016/..
?
13
Isolation properties and failure mechanisms of vertical Pt ..:
Fregolent, M.
;
Boito, M.
;
Marcuzzi, A.
...
Microelectronics Reliability. 138 (2022) - p. 114644 , 2022
Link:
https://doi.org/10.1016/..
?
14
Laser-induced activation of Mg-doped GaN: quantitative char..:
Nardo, A
;
de Santi, C
;
Carraro, C
...
Journal of Physics D: Applied Physics. 55 (2022) 18 - p. 185104 , 2022
Link:
https://doi.org/10.1088/..
?
15
Study and characterization of GaN MOS capacitors: Planar vs..:
Mukherjee, K.
;
De Santi, C.
;
You, S.
...
Applied Physics Letters. 120 (2022) 14 - p. , 2022
Link:
https://doi.org/10.1063/..
1-15