De Santi, C.
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1

Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Cap..:

Marcuzzi, A. ; Avramenko, M. ; De Santi, C....
Materials Science in Semiconductor Processing.  177 (2024)  - p. 108389 , 2024
 
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2

Review and Outlook on GaN and SiC Power Devices: Industrial..:

Buffolo, M. ; Favero, D. ; Marcuzzi, A....
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1344-1355 , 2024
 
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4

Trade-off between gate leakage current and threshold voltag..:

Favero, D. ; De Santi, C. ; Stockman, A....
Microelectronics Reliability.  150 (2023)  - p. 115129 , 2023
 
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5

Early failure of high-power white LEDs for outdoor applicat..:

Caria, A. ; Fraccaroli, R. ; Pierobon, G....
Microelectronics Reliability.  150 (2023)  - p. 115142 , 2023
 
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7

Impact of high-temperature operating lifetime tests on the ..:

Pilati, M. ; Buffolo, M. ; Rampazzo, F....
Microelectronics Reliability.  150 (2023)  - p. 115131 , 2023
 
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10

Threshold voltage instability in SiO2-gate semi-vertical Ga..:

Fregolent, M. ; Del Fiol, A. ; De Santi, C....
Microelectronics Reliability.  150 (2023)  - p. 115130 , 2023
 
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11

Bias-dependent degradation of single quantum well on InGaN-..:

Casu, C. ; Buffolo, M. ; Caria, A....
Microelectronics Reliability.  150 (2023)  - p. 115132 , 2023
 
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12

Comparison between Cu(In,Ga)Se2 solar cells with different ..:

Bertoncello, M. ; Barbato, M. ; Caria, A....
Microelectronics Reliability.  138 (2022)  - p. 114612 , 2022
 
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13

Isolation properties and failure mechanisms of vertical Pt ..:

Fregolent, M. ; Boito, M. ; Marcuzzi, A....
Microelectronics Reliability.  138 (2022)  - p. 114644 , 2022
 
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14

Laser-induced activation of Mg-doped GaN: quantitative char..:

Nardo, A ; de Santi, C ; Carraro, C...
Journal of Physics D: Applied Physics.  55 (2022)  18 - p. 185104 , 2022
 
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