E-LIB Suche - Ergebnisse für: Deng, Gaoqiang

1

Modelling the 3-D Charge-Sharing in Field-Plate Power MOSFE..:

Deng, Gaoqiang ; Wang, Jun ; Song, Xuanting...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1752-1757 , 2024

Link: https://doi.org/10.1109/..

2

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED:

Deng, Gaoqiang ; Yu, Jiaqi ; Niu, Yunfei...
ACS Photonics. 11 (2024) 5 - p. 1866-1872 , 2024

Link: https://doi.org/10.1021/..

3

Dynamic Degradation of Planar-Gate SiC MOSFETs After Total ..:

Liang, Shiwei ; Shu, Lei ; Wang, Jun..
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4079-4086 , 2024

Link: https://doi.org/10.1109/..

4

Effect of annealing on the electrical performance of N-pola..:

Xu, Nuo ; Deng, Gaoqiang ; Ma, Haotian...
Journal of Semiconductors. 45 (2024) 4 - p. 042501 , 2024

Link: https://doi.org/10.1088/..

5

Realization of N-polarity GaN films on graphene/SiC substra..:

Yu, Jiaqi ; Deng, Gaoqiang ; Niu, Yunfei...
Applied Surface Science. , 2024

Link: https://doi.org/10.1016/..

6

A Superjunction Insulated Gate Bipolar Transistor with Embe..:

Wu, Lijuan ; Zhang, Banghui ; Deng, Gaoqiang...
Journal of Electronic Materials. 52 (2023) 3 - p. 2177-2184 , 2023

Link: https://doi.org/10.1007/..

7

Improving dynamic characteristics for IGBTs by using interl..:

Wu 吴, Yi-Fan 毅帆 ; Deng 邓, Gao-Qiang 高强 ; Tan 谭, Chen 琛..
Chinese Physics B. 32 (2023) 12 - p. 128503 , 2023

Link: https://doi.org/10.1088/..

8

3-D Segmented Gate Concept: A New IGBT Solution for Reduced..:

Deng, Gaoqiang ; Wang, Jun ; Wu, Yifan..
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 3172-3178 , 2023

Link: https://doi.org/10.1109/..

9

High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-..:

Deng, Gaoqiang ; Zhang, Lidong ; Niu, Yunfei...
IEEE Electron Device Letters. 44 (2023) 7 - p. 1076-1079 , 2023

Link: https://doi.org/10.1109/..

10

Demonstration of Weak Polarization Electric Field III‐N LED..:

Zhang, Lidong ; Deng, Gaoqiang ; Tao, Tao...
Laser & Photonics Reviews. 17 (2023) 10 - p. , 2023

Link: https://doi.org/10.1002/..

11

Modeling Irradiation-Induced Degradation for 4H-SiC Power M..:

Liang, Shiwei ; Yang, Yu ; Shu, Lei...
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 1176-1180 , 2023

Link: https://doi.org/10.1109/..

12

Realization of p-type conduction in compositionally graded ..:

Zhao, Chunlei ; Deng, Gaoqiang ; Zhang, Lidong...
Micro and Nanostructures. 170 (2022) - p. 207377 , 2022

Link: https://doi.org/10.1016/..

13

Growth of high-quality nitrogen-polar GaN film by two-step ..:

Wang, Yang ; Niu, Yunfei ; Yu, Jiaqi...
Thin Solid Films. 752 (2022) - p. 139246 , 2022

Link: https://doi.org/10.1016/..

14

Performance enhancement of nitrogen-polar GaN-based light-e..:

Wang, Yang ; Wang, Yusen ; Zhang, Lidong...
Optics Letters. , 2022

Link: https://doi.org/10.1364/..

15

A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Str..:

Yu, Hengyu ; Wang, Jun ; Deng, Gaoqiang...
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 5104-5109 , 2022

Link: https://doi.org/10.1109/..