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Derenge, Michael A.
22
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1
First formed dislocations in microcompressed c-oriented GaN..:
Magagnosc, Daniel J.
;
Derenge, Michael A.
;
Jones, Kenneth A.
Journal of Applied Physics. 128 (2020) 4 - p. , 2020
Link:
https://doi.org/10.1063/..
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2
Topological and electrical properties of capped and anneale..:
Derenge, Michael A.
;
Jones, Kenneth A.
Journal of Applied Physics. 126 (2019) 3 - p. , 2019
Link:
https://doi.org/10.1063/..
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3
Annealing studies of AlN capped, MOCVD grown GaN films:
Derenge, Michael A.
;
Kirchner, Kevin W.
;
Jones, Kenneth A.
..
Solid-State Electronics. 101 (2014) - p. 23-28 , 2014
Link:
https://doi.org/10.1016/..
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4
Achieving Low Doped (<1016) GaN with Large Breakdown Voltag..:
Tompkins, Randy P.
;
Smith, J. R.
;
Derenge, Michael A.
...
ECS Transactions. 50 (2013) 3 - p. 297-305 , 2013
Link:
https://doi.org/10.1149/..
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5
HVPE GaN for high power electronic Schottky diodes:
Tompkins, Randy P.
;
Walsh, Timothy A.
;
Derenge, Michael A.
...
Solid-State Electronics. 79 (2013) - p. 238-243 , 2013
Link:
https://doi.org/10.1016/..
?
6
GaN Power Schottky Diodes:
Tompkins, Randy P.
;
Smith, Joshua R.
;
Zhou, Shuai
...
ECS Transactions. 45 (2012) 7 - p. 17-25 , 2012
Link:
https://doi.org/10.1149/..
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7
The effect of carbon impurities on lightly doped MOCVD GaN ..:
Tompkins, Randy P.
;
Walsh, Timothy A.
;
Derenge, Michael A.
...
Journal of Materials Research. 26 (2011) 23 - p. 2895-2900 , 2011
Link:
https://doi.org/10.1557/..
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8
Si implant-assisted Ohmic contacts to GaN:
Nguyen, Cuong
;
Shah, Pankaj
;
Leong, Edward
..
Solid-State Electronics. 54 (2010) 10 - p. 1227-1231 , 2010
Link:
https://doi.org/10.1016/..
?
9
Mosaicity and Wafer Bending in SiC Wafers as Measured by Do..:
Kirchner, K.W.
;
Jones, Kenneth A.
;
Derenge, Michael A.
..
Materials Science Forum. 556-557 (2007) - p. 213-218 , 2007
Link:
https://doi.org/10.4028/..
?
10
Comparison of Graphite and BN/AlN Annealing Caps for Ion Im..:
Jones, Kenneth A.
;
Wood, M.C.
;
Zheleva, T.S.
...
Materials Science Forum. 556-557 (2007) - p. 575-578 , 2007
Link:
https://doi.org/10.4028/..
?
11
Variations in the Effects of Implanting Al at Different Con..:
Jones, Kenneth A.
;
Zheleva, T.S.
;
Shah, Pankaj B.
...
Materials Science Forum. 527-529 (2006) - p. 831-834 , 2006
Link:
https://doi.org/10.4028/..
?
12
Characteristics and Ionization Coefficient Extraction of 1k..:
Zhu, Lin
;
Losee, Peter A.
;
Chow, T. Paul
...
Materials Science Forum. 527-529 (2006) - p. 1367-1370 , 2006
Link:
https://doi.org/10.4028/..
?
13
Observation of Thermal-Annealing Evolution of Defects in Io..:
Freitas, Jaime A.
;
Jones, Kenneth A.
;
Derenge, Michael A.
..
Materials Science Forum. 527-529 (2006) - p. 847-850 , 2006
Link:
https://doi.org/10.4028/..
?
14
Activation of Implanted Al and Co-Implanted Al/C or Al/Si i..:
Jones, Kenneth A.
;
Zheleva, T.S.
;
Ervin, Matthew H.
...
Materials Science Forum. 457-460 (2004) - p. 929-932 , 2004
Link:
https://doi.org/10.4028/..
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15
Structural Defects Formed in Al-Implanted and Annealed 4H-S..:
Jones, Kenneth A.
;
Zheleva, T.S.
;
Kulkarni, V.N.
...
Materials Science Forum. 457-460 (2004) - p. 889-892 , 2004
Link:
https://doi.org/10.4028/..
1-15