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Green, Ronald L.
756
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1
Effect of Dynamic Threshold-Voltage Instability on Dynamic ..:
Lelis, Aivars J.
;
Urciuoli, Damian P.
;
Schroen, Erik S.
..
IEEE Transactions on Electron Devices. 69 (2022) 10 - p. 5649-5655 , 2022
Link:
https://doi.org/10.1109/..
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2
Effects of Pulsed and DC Body-Diode Current Stress on the S..:
Green, Ronald
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Lelis, Aivars J.
;
Nouketcha, Franklin L.
Materials Science Forum. 1004 (2020) - p. 1027-1032 , 2020
Link:
https://doi.org/10.4028/..
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3
Influence of High-Temperature Bias Stress on Room-Temperatu..:
Habersat, Daniel B.
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Lelis, Aivars J.
;
Green, Ronald
Materials Science Forum. 963 (2019) - p. 757-762 , 2019
Link:
https://doi.org/10.4028/..
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4
Comparison of SiC MOSFET Characteristics Following Body-Dio..:
Green, Ronald
;
Lelis, Aivars J.
;
Nouketcha, Franklin L.
Materials Science Forum. 963 (2019) - p. 583-587 , 2019
Link:
https://doi.org/10.4028/..
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5
Influences of Bias Interruption and Reapplication on High-T..:
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
Materials Science Forum. 924 (2018) - p. 743-747 , 2018
Link:
https://doi.org/10.4028/..
?
6
Liver enzyme elevation caused by a compression of infiltrat..:
Kurihara, Manabu
;
Bahr, Robert J.
;
Green, Ronald
International Journal of Veterinary Science and Medicine. 6 (2018) 1 - p. 127-129 , 2018
Link:
https://doi.org/10.1016/..
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7
SiC MOSFET threshold-stability issues:
Lelis, Aivars J.
;
Green, Ronald
;
Habersat, Daniel B.
Materials Science in Semiconductor Processing. 78 (2018) - p. 32-37 , 2018
Link:
https://doi.org/10.1016/..
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8
Measurement considerations for evaluating BTI effects in Si..:
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
Microelectronics Reliability. 81 (2018) - p. 121-126 , 2018
Link:
https://doi.org/10.1016/..
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9
Short-Circuit Robustness of SiC Trench MOSFETs:
Green, Ronald
;
Urciuoli, Damian
;
Lelis, Aivars J.
Materials Science Forum. 924 (2018) - p. 715-718 , 2018
Link:
https://doi.org/10.4028/..
?
10
Teaching Zen's Ten Oxherding Pictures through Leonard Cohen..:
Green, Ronald
ASIANetwork Exchange: A Journal for Asian Studies in the Liberal Arts. 24 (2017) 1 - p. 29-58 , 2017
Link:
https://doi.org/10.16995..
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11
Short-Circuit Robustness Testing of SiC MOSFETs:
Green, Ronald
;
Urciuoli, Damian P.
;
Lelis, Aivars J.
Materials Science Forum. 897 (2017) - p. 525-528 , 2017
Link:
https://doi.org/10.4028/..
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12
Feasibility of SiC Threshold Voltage Drift Characterization..:
Habersat, Daniel B.
;
Green, Ronald
;
Lelis, Aivars J.
Materials Science Forum. 897 (2017) - p. 509-512 , 2017
Link:
https://doi.org/10.4028/..
?
13
Measurement Issues Affecting Threshold-Voltage Instability ..:
Green, Ronald
;
Lelis, Aivars J.
;
Habersat, Daniel B.
Materials Science Forum. 858 (2016) - p. 461-464 , 2016
Link:
https://doi.org/10.4028/..
?
14
Threshold-Voltage Instability in SiC MOSFETs Due to Near-In..:
Lelis, Aivars J.
;
Green, Ronald
;
Habersat, Daniel B.
Materials Science Forum. 858 (2016) - p. 585-590 , 2016
Link:
https://doi.org/10.4028/..
?
15
Comparison of Test Methods for Proper Characterization of V..:
Habersat, Daniel B.
;
Lelis, Aivars J.
;
Green, Ronald
.
Materials Science Forum. 858 (2016) - p. 833-839 , 2016
Link:
https://doi.org/10.4028/..
1-15