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Hetzl, Martin
17
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1
Optical characteristics of thin film-based InGaN micro-LED ..:
Vögl, Florian
;
Avramescu, Adrian
;
Gelfert, Sven
...
Optics Express. 32 (2024) 10 - p. 17644 , 2024
Link:
https://doi.org/10.1364/..
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2
Role of pixel design and emission wavelength on the light e..:
Vögl, Florian
;
Avramescu, Adrian
;
Knorr, Fabian
...
Optics Express. 31 (2023) 14 - p. 22997 , 2023
Link:
https://doi.org/10.1364/..
?
3
Sub-bandgap optical spectroscopy of epitaxialβ-Ga2O3 thin f..:
Hao, Sijie
;
Hetzl, Martin
;
Kunzelmann, Viktoria F.
...
Applied Physics Letters. 116 (2020) 9 - p. , 2020
Link:
https://doi.org/10.1063/..
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4
Photo-induced selective etching of GaN nanowires in water:
Kraut, Max
;
Pantle, Florian
;
Winnerl, Julia
...
Nanoscale. 11 (2019) 16 - p. 7967-7975 , 2019
Link:
https://doi.org/10.1039/..
?
5
GaN Nanowire Arrays for Efficient Optical Read-Out and Opto..:
Hetzl, Martin
;
Wierzbowski, Jakob
;
Hoffmann, Theresa
...
Nano Letters. 18 (2018) 6 - p. 3651-3660 , 2018
Link:
https://doi.org/10.1021/..
?
6
A systematic investigation of radiative recombination in Ga..:
Hetzl, Martin
;
Kraut, Max
;
Hoffmann, Theresa
...
Journal of Applied Physics. 124 (2018) 3 - p. , 2018
Link:
https://doi.org/10.1063/..
?
7
Contact morphology and revisited photocurrent dynamics in m..:
Parzinger, Eric
;
Hetzl, Martin
;
Wurstbauer, Ursula
.
npj 2D Materials and Applications. 1 (2017) 1 - p. , 2017
Link:
https://doi.org/10.1038/..
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8
Polarity Control of Heteroepitaxial GaN Nanowires on Diamon:
Hetzl, Martin
;
Kraut, Max
;
Hoffmann, Theresa
.
Nano Letters. 17 (2017) 6 - p. 3582-3590 , 2017
Link:
https://doi.org/10.1021/..
?
9
Surface passivation and self-regulated shell growth in sele..:
Hetzl, Martin
;
Winnerl, Julia
;
Francaviglia, Luca
...
Nanoscale. 9 (2017) 21 - p. 7179-7188 , 2017
Link:
https://doi.org/10.1039/..
?
10
GaN nanowires on diamond:
Hetzl, Martin
;
Schuster, Fabian
;
Winnerl, Andrea
..
Materials Science in Semiconductor Processing. 48 (2016) - p. 65-78 , 2016
Link:
https://doi.org/10.1016/..
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11
Reprint of: GaN nanowires on diamond:
Hetzl, Martin
;
Schuster, Fabian
;
Winnerl, Andrea
..
Materials Science in Semiconductor Processing. 55 (2016) - p. 32-45 , 2016
Link:
https://doi.org/10.1016/..
?
12
Strain-Induced Band Gap Engineering in Selectively Grown Ga..:
Hetzl, Martin
;
Kraut, Max
;
Winnerl, Julia
...
Nano Letters. 16 (2016) 11 - p. 7098-7106 , 2016
Link:
https://doi.org/10.1021/..
?
13
Position-Controlled Growth of GaN Nanowires and Nanotubes o..:
Schuster, Fabian
;
Hetzl, Martin
;
Weiszer, Saskia
...
Nano Letters. 15 (2015) 3 - p. 1773-1779 , 2015
Link:
https://doi.org/10.1021/..
?
14
Doped GaN nanowires on diamond: Structural properties and c..:
Schuster, Fabian
;
Winnerl, Andrea
;
Weiszer, Saskia
...
Journal of Applied Physics. 117 (2015) 4 - p. , 2015
Link:
https://doi.org/10.1063/..
?
15
Optoelectronic properties of p-diamond/n-GaN nanowire heter..:
Schuster, Fabian
;
Hetzl, Martin
;
Weiszer, Saskia
...
Journal of Applied Physics. 118 (2015) 15 - p. , 2015
Link:
https://doi.org/10.1063/..
1-15