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Kim, Hyun-Seop
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1

Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barr..:

Kim, Hyun-Seop ; Bhat, Aditya K. ; Smith, Matthew D..
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3609-3613 , 2024
Link: https://doi.org/10.1109/..
 
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2

Analysis of interface trap induced ledge in β-Ga2O3 based M..:

Bhat, Aditya K. ; Kim, Hyun-Seop ; Mishra, Abhishek...
Journal of Applied Physics.  135 (2024)  19 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivatio..:

Yang, Yeo-Reum ; Yim, Jun-Hyeok ; Kim, Hyun-Seop.
Materials Science in Semiconductor Processing.  179 (2024)  - p. 108483 , 2024
Link: https://doi.org/10.1016/..
 
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4

Antifungal and Plant-Growth Promotion Effects of Bacillus v..:

Yun, Ju-Yeol ; Kim, Hyun-Seop ; Moon, Jae-Hyun...
Forests.  15 (2023)  1 - p. 62 , 2023
Link: https://doi.org/10.3390/..
 
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5

On/off-state noise characteristics in AlGaN/GaN HFET with A..:

Im, Ki-Sik ; Choi, Uiho ; Kim, Minho...
Applied Physics Letters.  120 (2022)  1 - p. , 2022
Link: https://doi.org/10.1063/..
 
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6

Temperature- and Frequency-Dependent Ferroelectric Characte..:

Jang, Chan-Hee ; Kim, Hyun-Seop ; Kim, Hyungtak.
Materials.  15 (2022)  6 - p. 2097 , 2022
Link: https://doi.org/10.3390/..
 
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7

PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin ..:

Kim, Hyun-Seop ; Kang, Myoung-Jin ; Jang, Won-Ho...
Solid-State Electronics.  173 (2020)  - p. 107876 , 2020
Link: https://doi.org/10.1016/..
 
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8

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-..:

Kim, Hyun-Seop ; Kang, Myoung-Jin ; Kim, Jeong Jin..
Materials.  13 (2020)  7 - p. 1538 , 2020
Link: https://doi.org/10.3390/..
 
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9

Development of Catalytic-CVD SiNx Passivation Process for A..:

Kang, Myoung-Jin ; Kim, Hyun-Seop ; Cha, Ho-Young.
Crystals.  10 (2020)  9 - p. 842 , 2020
Link: https://doi.org/10.3390/..
 
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10

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma ..:

Kang, Myoung-Jin ; Eom, Su-Keun ; Kim, Hyun-Seop...
Semiconductor Science and Technology.  34 (2019)  5 - p. 055018 , 2019
Link: https://doi.org/10.1088/..
 
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11

Atomic-layer deposition of crystalline BeO on SiC:

Lee, Seung Min ; Jang, Yoonseo ; Jung, Jongho...
Applied Surface Science.  469 (2019)  - p. 634-640 , 2019
Link: https://doi.org/10.1016/..
 
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12

Direct Current and Radio Frequency Characterizations of AlG..:

Choi, Uiho ; Kim, Hyun-Seop ; Lee, Kyeongjae...
physica status solidi (a).  217 (2019)  7 - p. , 2019
Link: https://doi.org/10.1002/..
 
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13

Growth behavior of GaN on AlN for fully coalesced channel o..:

Choi, Uiho ; Lee, Kyeongjae ; Kwak, Taemyung...
Japanese Journal of Applied Physics.  58 (2019)  12 - p. 121003 , 2019
Link: https://doi.org/10.7567/..
 
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14

Time-dependent dielectric breakdown of recessed AlGaN/GaN-o..:

Kim, Hyun-Seop ; Eom, Su-Keun ; Seo, Kwang-Seok..
Vacuum.  155 (2018)  - p. 428-433 , 2018
Link: https://doi.org/10.1016/..
 
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15

Improved interface characteristics of Mo/SiO2/4H-SiC metal-..:

Lee, Jae-Gil ; Kim, Dong-Hwan ; Eom, Su-Keun...
Journal of the Korean Physical Society.  72 (2018)  1 - p. 166-170 , 2018
Link: https://doi.org/10.3938/..
 
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