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Lee, In-Geun
8509
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1
High-performance uniform stepper-based InP double-heterojun..:
Heon Shin, Seung
;
Jeong, Hyeon-Seok
;
Kim, Yong-Hyun
...
Solid-State Electronics. 217 (2024) - p. 108933 , 2024
Link:
https://doi.org/10.1016/..
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2
Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron..:
Park, Wan-Soo
;
Jo, Hyeon-Bhin
;
Kim, Hyo-Jin
...
IEEE Transactions on Electron Devices. 70 (2023) 4 - p. 2081-2089 , 2023
Link:
https://doi.org/10.1109/..
?
3
Impact of Output Conductance on Current-Gain Cut-Off Freque..:
Kim, Hyo-Jin
;
Lee, In-Geun
;
Jo, Hyeon-Bhin
...
Electronics. 12 (2023) 2 - p. 259 , 2023
Link:
https://doi.org/10.3390/..
?
4
A New Methodology to Analyze Carrier Transport Properties f..:
Kim, Hyo-Jin
;
Yoo, Ji-Hoon
;
Park, Wan-Soo
...
IEEE Electron Device Letters. 44 (2023) 2 - p. 229-232 , 2023
Link:
https://doi.org/10.1109/..
?
5
Analytical and Physical Investigation on Source Resistance ..:
Yoo, Ji-Hoon
;
Lee, In-Geun
;
Tsutsumi, Takuya
...
Micromachines. 14 (2023) 2 - p. 439 , 2023
Link:
https://doi.org/10.3390/..
?
6
Comprehensive modeling of the extrinsic transconductance fo..:
Yun, Seung-Won
;
Jo, Hyeon-Bhin
;
Jeong, Hyeon-Seok
...
Solid-State Electronics. 198 (2022) - p. 108484 , 2022
Link:
https://doi.org/10.1016/..
?
7
Physics-Based Analytical Channel Charge Model of In xGa1-xA..:
Jeong, Hyeon-Seok
;
Park, Wan-Soo
;
Jo, Hyeon-Bhin
...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 387-396 , 2022
Link:
https://doi.org/10.1109/..
?
8
Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs..:
Lee, In-Geun
;
Jo, Hyeon-Bhin
;
Baek, Ji-Min
...
Electronics. 11 (2022) 17 - p. 2744 , 2022
Link:
https://doi.org/10.3390/..
?
9
High performance InGaAs channel MOSFETs on highly resistive..:
Lee, Sang Tae
;
Lee, In-Geun
;
Jang, Hyunchul
...
Solid-State Electronics. 176 (2021) - p. 107940 , 2021
Link:
https://doi.org/10.1016/..
?
10
Impact of Sulfur Passivation on Carrier Transport Propertie..:
Kim, Jun-Gyu
;
Jo, Hyeon-Bhin
;
Lee, In-Geun
..
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 209-214 , 2021
Link:
https://doi.org/10.1109/..
?
11
Theoretical and experimental analysis of the source resista..:
Lee, In-Geun
;
Ko, Dae-Hong
;
Yun, Seung-Won
...
Journal of the Korean Physical Society. 78 (2021) 6 - p. 516-522 , 2021
Link:
https://doi.org/10.1007/..
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12
Study of Multi-twin Defects Generated in GaAs and InP Films..:
Lee, Juhee
;
Shin, Hyunsu
;
Lee, In-Geun
.
Journal of the Korean Physical Society. 77 (2020) 7 - p. 592-597 , 2020
Link:
https://doi.org/10.3938/..
?
13
Vertical InGaAs tunnel-field-effect transistors by an elect..:
Baek, Ji-Min
;
Jo, Hyeon-Bhin
;
Yun, Do-Young
...
Solid-State Electronics. 164 (2020) - p. 107681 , 2020
Link:
https://doi.org/10.1016/..
?
14
Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFE..:
Lee, In-Geun
;
Jo, Hyeon-Bhin
;
Yun, Do-Young
...
Applied Physics Express. 12 (2019) 6 - p. 064003 , 2019
Link:
https://doi.org/10.7567/..
?
15
Process to Form V-Grooved Trenches on Patterned Si (001) Su..:
Cho, Young-Dae
;
Lee, In-Geun
;
Lee, Joo-Hee
...
ECS Journal of Solid State Science and Technology. 5 (2016) 7 - p. P409-P411 , 2016
Link:
https://doi.org/10.1149/..
1-15