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Linten, Dimitri
18
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1
Negative Bias-Temperature Instabilities and Low-Frequency N..:
Luo, Xuyi
;
Zhang, En Xia
;
Wang, Peng Fei
...
IEEE Transactions on Device and Materials Reliability. 23 (2023) 1 - p. 153-161 , 2023
Link:
https://doi.org/10.1109/..
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2
Fault Attack Investigation on TaOx Resistive-RAM for Cyber ..:
Kumar, Ankit
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Degraeve, Robin
;
Beckers, Arthur
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IEEE Transactions on Electron Devices. 70 (2023) 8 - p. 4170-4177 , 2023
Link:
https://doi.org/10.1109/..
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3
Effects of Geometry and Cycling on the Radiation Response o..:
Cao, Jingchen
;
Wynocker, Isabella
;
Zhang, En Xia
...
IEEE Transactions on Nuclear Science. 70 (2023) 4 - p. 634-640 , 2023
Link:
https://doi.org/10.1109/..
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4
A Pragmatic Model to Predict Future Device Aging:
Brown, James
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Tok, Kean Hong
;
Gao, Rui
...
IEEE Access. 11 (2023) - p. 127725-127736 , 2023
Link:
https://doi.org/10.1109/..
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5
Deep Understanding of Electron Beam Effects on 2D Layered S..:
Lee, Kookjin
;
Ji, Hyunjin
;
Kim, Yanghee
...
Advanced Materials Interfaces. 9 (2022) 9 - p. , 2022
Link:
https://doi.org/10.1002/..
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6
ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S..:
Chen, Wen-Chieh
;
Chen, Shih-Hung
;
Chiarella, Thomas
...
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 5357-5362 , 2022
Link:
https://doi.org/10.1109/..
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7
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Dee..:
Rony, M. W.
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Zhang, En Xia
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Toguchi, Shintaro
...
IEEE Transactions on Nuclear Science. 69 (2022) 3 - p. 299-306 , 2022
Link:
https://doi.org/10.1109/..
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8
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CM..:
Bonaldo, Stefano
;
Gorchichko, Mariia
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Zhang, En Xia
...
IEEE Transactions on Nuclear Science. 69 (2022) 7 - p. 1444-1452 , 2022
Link:
https://doi.org/10.1109/..
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9
Cyclic Thermal Effects on Devices of Two‐Dimensional Layere..:
Kim, Yeonsu
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Kaczer, Ben
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Verreck, Devin
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Advanced Electronic Materials. 7 (2021) 9 - p. 2100348 , 2021
Link:
https://doi.org/10.1002/..
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10
Extensive assessment of the charge-trapping kinetics in InG..:
Putcha, Vamsi
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Franco, Jacopo
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Vais, Abhitosh
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Microelectronics Reliability. 115 (2020) - p. 113996 , 2020
Link:
https://doi.org/10.1016/..
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11
Electrostatic discharge robustness of amorphous indium-gall..:
Simicic, Marko
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Ashif, Nowab Reza
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Hellings, Geert
...
Microelectronics Reliability. 108 (2020) - p. 113632 , 2020
Link:
https://doi.org/10.1016/..
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12
Discussion on the Figures of Merit of Identified Traps Loca..:
Cretu, Bogdan
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Nafaa, Beya
;
Simoen, Eddy
...
ECS Transactions. 97 (2020) 5 - p. 45-51 , 2020
Link:
https://doi.org/10.1149/..
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13
Correlated Time-0 and Hot-Carrier Stress Induced FinFET Par..:
Makarov, Alexander
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Roussel, Philippe
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Bury, Erik
...
Micromachines. 11 (2020) 7 - p. 657 , 2020
Link:
https://doi.org/10.3390/..
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14
A Cautionary Note When Looking for a Truly Reconfigurable R..:
Chuang, Kai-Hsin
;
Degraeve, Robin
;
Fantini, Andrea
...
IACR Transactions on Cryptographic Hardware and Embedded Systems. , 2018
Link:
https://doi.org/10.46586..
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15
Impact of on- and off-chip protection on the transient-indu..:
Scholz, Mirko
;
Chen, Shih-Hung
;
Hellings, Geert
.
Microelectronics Reliability. 57 (2016) - p. 53-58 , 2016
Link:
https://doi.org/10.1016/..
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