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Losee, Peter A.
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1

SiC Charge-Balanced Devices Offering Breakthrough Performan..:

Bolotnikov, Alexander ; Losee, Peter A. ; Ghandi, Reza...
Materials Science Forum.  963 (2019)  - p. 655-659 , 2019
Link: https://doi.org/10.4028/..
 
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2

Optimization of 1700V SiC MOSFET for Short Circuit Ruggedne..:

Bolotnikov, Alexander ; Losee, Peter A. ; Ghandi, Reza..
Materials Science Forum.  963 (2019)  - p. 801-804 , 2019
Link: https://doi.org/10.4028/..
 
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3

Deep Level Transient Spectroscopy (DLTS) Study of 4H-SiC Sc..:

Zhou, Xiang ; Pandey, Gyanesh ; Ghandi, Reza...
Materials Science Forum.  963 (2019)  - p. 516-519 , 2019
Link: https://doi.org/10.4028/..
 
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4

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Imp..:

Ghandi, Reza ; Losee, Peter ; Bolotnikov, Alexander.
Materials Science Forum.  924 (2018)  - p. 573-576 , 2018
Link: https://doi.org/10.4028/..
 
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5

Readiness of SiC MOSFETs for Aerospace and Industrial Appli..:

Stevanovic, Ljubisa ; Losee, Peter A. ; Kennerly, Stacey...
Materials Science Forum.  858 (2016)  - p. 894-899 , 2016
Link: https://doi.org/10.4028/..
 
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6

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent ..:

Losee, Peter A. ; Bolotnikov, Alexander ; Kennerly, Stacey...
Materials Science Forum.  858 (2016)  - p. 876-879 , 2016
Link: https://doi.org/10.4028/..
 
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7

Design of Area-Efficient, Robust and Reliable Junction Term..:

Bolotnikov, Alexander ; Losee, Peter A. ; Deeb, Peter...
Materials Science Forum.  858 (2016)  - p. 737-740 , 2016
Link: https://doi.org/10.4028/..
 
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8

Utilization of SiC MOSFET Body Diode in Hard Switching Appl..:

Bolotnikov, Alexander ; Glaser, John ; Nasadoski, Jeff...
Materials Science Forum.  778-780 (2014)  - p. 947-950 , 2014
Link: https://doi.org/10.4028/..
 
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9

Bipolar Degradation in 4H-SiC Thyristors:

Soloviev, Stanislav I. ; Losee, Peter A. ; Arthur, Stephen...
Materials Science Forum.  717-720 (2012)  - p. 1175-1178 , 2012
Link: https://doi.org/10.4028/..
 
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10

Design, Yield and Process Capability Study of 8 kV 4H-SiC P..:

Bolotnikov, Alexander ; Losee, Peter A. ; Matocha, Kevin...
Materials Science Forum.  717-720 (2012)  - p. 953-956 , 2012
Link: https://doi.org/10.4028/..
 
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11

300°C Silicon Carbide Integrated Circuits:

Stum, Zachary ; Tilak, Vinayak ; Losee, Peter A...
Materials Science Forum.  679-680 (2011)  - p. 730-733 , 2011
Link: https://doi.org/10.4028/..
 
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12

4kV Silicon Carbide MOSFETs:

Stum, Zachary ; Bolotnikov, A.V. ; Losee, Peter A....
Materials Science Forum.  679-680 (2011)  - p. 637-640 , 2011
Link: https://doi.org/10.4028/..
 
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13

Performance and Reliability of SiC MOSFETs for High-Current..:

Matocha, Kevin ; Losee, Peter A. ; Gowda, Arun...
Materials Science Forum.  645-648 (2010)  - p. 1123-1126 , 2010
Link: https://doi.org/10.4028/..
 
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14

3kV 4H-SiC Thyristors for Pulsed Power Applications:

Elasser, Ahmed ; Losee, Peter A. ; Arthur, Steve...
Materials Science Forum.  645-648 (2010)  - p. 1053-1056 , 2010
Link: https://doi.org/10.4028/..
 
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15

100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules:

Losee, Peter A. ; Matocha, Kevin ; Arthur, Steve...
Materials Science Forum.  615-617 (2009)  - p. 899-902 , 2009
Link: https://doi.org/10.4028/..
 
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