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Ning, Bingxu
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1

Design and verification of multiple SEU mitigated circuits ..:

Yu, Jian ; Cai, Chang ; Ning, Bingxu...
Microelectronics Reliability.  126 (2021)  - p. 114340 , 2021
Link: https://doi.org/10.1016/..
 
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2

Measurement and evaluation of the Single Event Effects of h..:

Wang, Shu ; Cai, Chang ; Ning, Bingxu...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  1012 (2021)  - p. 165618 , 2021
Link: https://doi.org/10.1016/..
 
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3

SEU sensitivity and large spacing TMR efficiency of Kintex-..:

Cai, Chang ; Ning, Bingxu ; Fan, Xue...
Science China Information Sciences.  65 (2021)  2 - p. , 2021
Link: https://doi.org/10.1007/..
 
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4

Total ionizing dose induced single transistor latchup in 13..:

Fan, Shuang ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics B.  26 (2017)  3 - p. 036103 , 2017
Link: https://doi.org/10.1088/..
 
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5

Total-Ionizing-Dose-Induced Body Current Lowering in the 13..:

Liu, Xiao-Nian ; Dai, Li-Hua ; Ning, Bing-Xu.
Chinese Physics Letters.  34 (2017)  1 - p. 016103 , 2017
Link: https://doi.org/10.1088/..
 
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6

Bias dependence of TID induced single transistor latch for ..:

Fan, Shuang ; Ning, Bingxu ; Hu, Zhiyuan...
Microelectronics Reliability.  56 (2016)  - p. 1-9 , 2016
Link: https://doi.org/10.1016/..
 
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7

Radiation-enhanced gate-induced-drain-leakage current in th..:

Peng, Chao ; Hu, Zhiyuan ; Ning, Bingxu...
Solid-State Electronics.  106 (2015)  - p. 81-86 , 2015
Link: https://doi.org/10.1016/..
 
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8

Investigating the degradation mechanisms caused by the TID ..:

Peng, Chao ; Hu, Zhiyuan ; Zhang, Zhengxuan...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  748 (2014)  - p. 70-78 , 2014
Link: https://doi.org/10.1016/..
 
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9

Total ionizing dose effect in 0.2μm PDSOI NMOSFETs with sha..:

Peng, Chao ; Hu, Zhiyuan ; Zhang, Zhengxuan...
Microelectronics Reliability.  54 (2014)  4 - p. 730-737 , 2014
Link: https://doi.org/10.1016/..
 
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10

Utilizing a shallow trench isolation parasitic transistor t..:

Peng, Chao ; Hu, Zhi-Yuan ; Ning, Bing-Xu...
Chinese Physics B.  23 (2014)  9 - p. 090702 , 2014
Link: https://doi.org/10.1088/..
 
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11

Comprehensive study on the TID effects of 0.13μm partially ..:

Ning, Bingxu ; Bi, Dawei ; Huang, Huixiang...
Microelectronics Journal.  44 (2013)  2 - p. 86-93 , 2013
Link: https://doi.org/10.1016/..
 
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12

Enhanced Radiation Sensitivity in Short-Channel Partially D..:

Peng, Chao ; Zhang, Zheng-Xuan ; Hu, Zhi-Yuan...
Chinese Physics Letters.  30 (2013)  9 - p. 098502 , 2013
Link: https://doi.org/10.1088/..
 
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13

Bias dependence of TID radiation responses of 0.13μm partia..:

Ning, Bingxu ; Bi, Dawei ; Huang, Huixiang...
Microelectronics Reliability.  53 (2013)  2 - p. 259-264 , 2013
Link: https://doi.org/10.1016/..
 
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14

Radiation-induced shallow trench isolation leakage in 180-n..:

Ning, Bingxu ; Zhang, Zhengxuan ; Liu, Zhangli...
Microelectronics Reliability.  52 (2012)  1 - p. 130-136 , 2012
Link: https://doi.org/10.1016/..
 
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15

Analysis of bias effects on the total ionizing dose respons..:

Liu, Zhangli ; Hu, Zhiyuan ; Zhang, Zhengxuan...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  644 (2011)  1 - p. 48-54 , 2011
Link: https://doi.org/10.1016/..
 
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