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Rampazzo, Fabiana
18
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1
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxia..:
Zanoni, Enrico
;
De Santi, Carlo
;
Gao, Zhan
...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1396-1407 , 2024
Link:
https://doi.org/10.1109/..
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2
Impact of the oxide aperture width on the degradation of 84..:
Zenari, Michele
;
Buffolo, Matteo
;
Rampazzo, Fabiana
...
IEEE Journal of Selected Topics in Quantum Electronics. , 2024
Link:
https://doi.org/10.1109/..
?
3
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN..:
Nicoletto, Marco
;
Caria, Alessandro
;
Rampazzo, Fabiana
...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 2051-2057 , 2024
Link:
https://doi.org/10.1109/..
?
4
Transconductance Overshoot, a New Trap-Related Effect in Al..:
Zhan, Gao
;
Rampazzo, Fabiana
;
De Santi, Carlo
...
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 3005-3010 , 2023
Link:
https://doi.org/10.1109/..
?
5
Influence of V-Pits on the Turn-On Voltage of GaN-Based Hig..:
Nicoletto, Marco
;
Caria, Alessandro
;
Rampazzo, Fabiana
...
IEEE Journal of Photovoltaics. 13 (2023) 6 - p. 891-898 , 2023
Link:
https://doi.org/10.1109/..
?
6
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in Al..:
Gao, Zhan
;
De Santi, Carlo
;
Rampazzo, Fabiana
...
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6256-6261 , 2023
Link:
https://doi.org/10.1109/..
?
7
Failure Physics and Reliability of GaN‐Based HEMTs for Micr..:
Zanoni, Enrico
;
Rampazzo, Fabiana
;
De Santi, Carlo
...
physica status solidi (a). 219 (2022) 24 - p. , 2022
Link:
https://doi.org/10.1002/..
?
8
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:
Gao, Zhan
;
Rampazzo, Fabiana
;
Meneghini, Matteo
...
Microelectronics Reliability. 126 (2021) - p. 114318 , 2021
Link:
https://doi.org/10.1016/..
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9
Short term reliability and robustness of ultra-thin barrier..:
Gao, ZHan
;
Meneghini, Matteo
;
Harrouche, Kathia
...
Microelectronics Reliability. 123 (2021) - p. 114199 , 2021
Link:
https://doi.org/10.1016/..
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10
Electrical and Electroluminescence Characteristics of AlGaN..:
Meneghini, Matteo
;
Zanandrea, Alberto
;
Rampazzo, Fabiana
...
Japanese Journal of Applied Physics. 52 (2013) 8S - p. 08JN17 , 2013
Link:
https://doi.org/10.7567/..
?
11
(Invited) Electric-Field and Thermally-Activated Failure Me..:
Zanoni, Enrico
;
Meneghesso, Gaudenzio
;
Meneghini, Matteo
...
ECS Transactions. 41 (2011) 8 - p. 237-249 , 2011
Link:
https://doi.org/10.1149/..
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12
Improved stability in wide-recess InP HEMTs by means of a f..:
Suemitsu, Tetsuya
;
Fukai, Yoshino K.
;
Tokumitsu, Masami
...
IEICE Electronics Express. 3 (2006) 13 - p. 310-315 , 2006
Link:
https://doi.org/10.1587/..
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13
Modelling and simulation of wool steaming for the efficient..:
Ferro, Fabiana Federica
;
Rampazzo, Mirco
;
Beghi, Alessandro
...
E3S Web of Conferences. 128 (2019) - p. 09010 , 2019
Link:
https://doi.org/10.1051/..
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14
Intellectual function evaluation of first generation immigr..:
Montanaro, Maria
;
Colombatti, Raffaella
;
Pugliese, Marisa
...
Italian Journal of Pediatrics. 39 (2013) 1 - p. , 2013
Link:
https://doi.org/10.1186/..
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15
Fissuras labiopalatinas: Revisão de Literatura:
Moreira Gonzalez Silva, João Pedro
;
Tamillles Campos Martins, Kassia
;
Souza da Silva, Gabrielle
...
Brazilian Journal of Implantology and Health Sciences. 6 (2024) 3 - p. 2875-2883 , 2024
Link:
https://doi.org/10.36557..
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