Sheng, Kuang
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1

1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With..:

Liu, Li ; Wang, Jue ; Ren, Na..
IEEE Electron Device Letters.  45 (2024)  8 - p. 1492-1495 , 2024
 
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5

Design and Experimental Demonstration of 4H-SiC Lateral Hig..:

Liu, Li ; Guo, Qing ; Wang, Jue...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1572-1579 , 2024
 
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6

Elucidating the effect of H2S on the syngas autotrophic fer..:

Zhang, Zengshuai ; Ni, Jun ; Sheng, Kuang...
Chemical Engineering Journal.  496 (2024)  - p. 153768 , 2024
 
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8

Dynamic On-Resistance Characterization of GaN Power HEMTs U..:

Xie, Zonglun ; Wu, Xinke ; Dong, Zezheng...
IEEE Transactions on Power Electronics.  39 (2024)  2 - p. 1963-1967 , 2024
 
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10

Investigation of Z-type manifold microchannel cooling for u..:

Yang, Shudong ; Li, Junye ; Cao, Biqi..
International Journal of Heat and Mass Transfer.  218 (2024)  - p. 124792 , 2024
 
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12

Post-trench restoration for vertical GaN power devices:

Li, Yanjun ; Ren, Na ; Wang, Hengyu...
Applied Physics Letters.  124 (2024)  9 - p. , 2024
 
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13

Numerical Simulation and Analytical Modeling of Multichanne..:

He, Quanbo ; Wang, Hengyu ; Xiao, Ming...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1710-1717 , 2024
 
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14

Numerical study on a new manifold ring-shaped microchannel ..:

Xin, Zhicheng ; Tang, Weiyu ; Wu, Zan...
International Journal of Thermal Sciences.  204 (2024)  - p. 109225 , 2024
 
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15

Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junct..:

Li, Shaocheng ; Yang, Shu ; Han, Zhao...
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 548-554 , 2024
 
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