E-LIB Suche - Ergebnisse für: Xiang, Jinjuan

1

Role of Nitrogen in Suppressing Interfacial States Generati..:

Dai, Saifei ; Li, Songwei ; Xu, Shuangshuang...
IEEE Transactions on Electron Devices. , 2024

Link: https://doi.org/10.1109/..

2

On the relationship between imprint and reliability in Hf0...:

Yuan, Peng ; Chen, Yuting ; Chai, Liguo...
Journal of Semiconductors. 45 (2024) 4 - p. 042301 , 2024

Link: https://doi.org/10.1088/..

3

Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET Durin..:

Tian, Fengbin ; Sun, Xiaoqing ; Li, Songwei...
IEEE Transactions on Electron Devices. 71 (2024) 2 - p. 1040-1047 , 2024

Link: https://doi.org/10.1109/..

4

A design methodology for highly reliable operation for 2T0C..:

Liang, Jing ; Yuan, Peng ; Yu, Yong...
Japanese Journal of Applied Physics. 63 (2024) 6 - p. 06SP05 , 2024

Link: https://doi.org/10.35848..

5

CMOS Scaling for the 5 nm Node and Beyond: Device, Process ..:

Radamson, Henry H. ; Miao, Yuanhao ; Zhou, Ziwei...
Nanomaterials. 14 (2024) 10 - p. 837 , 2024

Link: https://doi.org/10.3390/..

6

Switching Dynamics of HfO2–ZrO2 Nanolaminates With Differen..:

Ke, Xiaoyu ; Chai, Junshuai ; Shao, Xianzhou...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3651-3658 , 2024

Link: https://doi.org/10.1109/..

7

Investigation of Charge Trapping Induced Trap Generation in..:

Jia, Xinpei ; Chai, Junshuai ; Duan, Jiahui...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1845-1851 , 2024

Link: https://doi.org/10.1109/..

8

Investigation of Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\tex..:

Dai, Saifei ; Chai, Junshuai ; Duan, Jiahui...
IEEE Transactions on Electron Devices. , 2024

Link: https://doi.org/10.1109/..

9

The Endurance and Reliability Mechanisms Investigation of I..:

Luo, Jie ; Yang, Yanyu ; Yan, Gangping...
IEEE Journal of the Electron Devices Society. , 2024

Link: https://doi.org/10.1109/..

10

Implementation of sub-100 nm vertical channel-all-around (C..:

Chen, Yuting ; Duan, Xinlv ; Ma, Xueli...
Journal of Semiconductors. 45 (2024) 7 - p. 072301 , 2024

Link: https://doi.org/10.1088/..

11

Investigation of Endurance Degradation Mechanism of Si FeFE..:

Shao, Xianzhou ; Chai, Junshuai ; Tian, Fengbin...
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 3043-3050 , 2023

Link: https://doi.org/10.1109/..

12

A Compact Model of Double Hysteresis Loop for Antiferroelec..:

Liao, Min ; Chai, Junshuai ; Xiang, Jinjuan...
IEEE Transactions on Electron Devices. 70 (2023) 9 - p. 4940-4944 , 2023

Link: https://doi.org/10.1109/..

13

A Physics-Based Model of Charge Trapping Behavior of Si FeF..:

Sun, Xiaoqing ; Chai, Junshuai ; Tian, Fengbin...
IEEE Transactions on Electron Devices. 70 (2023) 9 - p. 4641-4646 , 2023

Link: https://doi.org/10.1109/..

14

Impact of Saturated Spontaneous Polarization on the Enduran..:

Liao, Min ; Xu, Hao ; Duan, Jiahui...
IEEE Transactions on Electron Devices. 70 (2023) 8 - p. 4055-4061 , 2023

Link: https://doi.org/10.1109/..

15

Trap characteristics of hafnium oxide-based ferroelectric f..:

Li, Yilin ; Zhu, Hui ; Liu, Xing...
Applied Physics Letters. 122 (2023) 11 - p. , 2023

Link: https://doi.org/10.1063/..