E-LIB Suche - Ergebnisse für: Yu, Guohao

1

In-Plane Radiation of Surface Plasmon Polaritons Excited by..:

Zhang, Ping ; Dong, Yin ; Li, Xubo...
Micromachines. 15 (2024) 6 - p. 723 , 2024

Link: https://doi.org/10.3390/..

2

Annealing Process on Metal–Oxide–Semiconductor Channel Prop..:

Zhou, Jiaan ; Yang, An ; Yu, Guohao...
physica status solidi (RRL) – Rapid Research Letters. , 2024

Link: https://doi.org/10.1002/..

3

High-performance GaN metal–insulator–semiconductor high ele..:

Huang, Qizhi ; Deng, Xuguang ; Zhang, Li...
Applied Physics Letters. 124 (2024) 23 - p. , 2024

Link: https://doi.org/10.1063/..

4

Improved Gate Stability of Metal–Insulator–Semiconductor-Hi..:

Li, Yu ; Zhou, Jiaan ; Xing, Runxian...
ACS Applied Electronic Materials. , 2024

Link: https://doi.org/10.1021/..

5

Current-collapse suppression and leakage-current decrease i..:

Liu, Bosen ; Yu, Guohao ; Jia, Huimin...
Journal of Semiconductors. 45 (2024) 7 - p. 072501 , 2024

Link: https://doi.org/10.1088/..

6

Monolithic Investigation of Hydrogen Plasma-Treated and Etc..:

Li, Fan ; Liang, Ye ; Zhang, Yuanlei...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3801-3804 , 2024

Link: https://doi.org/10.1109/..

7

Polarization Properties in AlGaN/GaN HEMT-Array with a Shif..:

Xing, Runxian ; Zhang, Ping ; Guo, Hongyang...
Plasmonics. , 2024

Link: https://doi.org/10.1007/..

8

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semicond..:

Guo, Bohan ; Yu, Guohao ; Zhang, Li...
Crystals. 14 (2024) 3 - p. 253 , 2024

Link: https://doi.org/10.3390/..

9

Study of enhancement-mode GaN pFET with H plasma treated ga..:

Gao, Xiaotian ; Yu, Guohao ; Zhou, Jiaan...
Journal of Semiconductors. 44 (2023) 11 - p. 112801 , 2023

Link: https://doi.org/10.1088/..

10

Comparative Analysis of the GaN Nonpolar Plane Morphology b..:

Zhou, Jiaan ; Tang, Wenxin ; Ju, Tao...
ACS Applied Materials & Interfaces. 15 (2023) 21 - p. 26159-26165 , 2023

Link: https://doi.org/10.1021/..

11

Ethylene for carbon doping of GaN by atmospheric pressure m..:

Zhang, Li ; Dong, Zhongyuan ; Deng, Xuguang...
Materials Letters. 345 (2023) - p. 134475 , 2023

Link: https://doi.org/10.1016/..

12

Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorina..:

Ding, Xiaoyu ; Song, Liang ; Yu, Guohao...
Materials Science in Semiconductor Processing. 162 (2023) - p. 107502 , 2023

Link: https://doi.org/10.1016/..

13

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN..:

Yang, An ; Wei, Xing ; Shen, Wenchao...
Crystals. 13 (2023) 4 - p. 620 , 2023

Link: https://doi.org/10.3390/..

14

The effect of Si3N4/Al2O3 stacked structure of AlGaN/GaN HE..:

Xing, Yanhui ; Han, Zishuo ; Huang, Xingjie...
Microelectronics Reliability. 151 (2023) - p. 115263 , 2023

Link: https://doi.org/10.1016/..

15

Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunctio..:

Ma, Ying ; Chen, Liang ; Dong, Zhihua...
Electronics. 12 (2023) 8 - p. 1809 , 2023

Link: https://doi.org/10.3390/..