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Zheng, Zheyang
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1

GaN Power Integration Technology and Its Future Prospects:

Wei, Jin ; Zheng, Zheyang ; Tang, Gaofei...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1365-1382 , 2024
Link: https://doi.org/10.1109/..
 
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2

GaN-Based Charge Trapping Memory With an AlN Interfacial La..:

Chen, Tao ; Zheng, Zheyang ; Feng, Sirui...
IEEE Electron Device Letters.  45 (2024)  7 - p. 1133-1136 , 2024
Link: https://doi.org/10.1109/..
 
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3

Investigating Forward Gate ESD Mechanism of Schottky-Type p..:

Sun, Jiahui ; Zheng, Zheyang ; Shu, Ji.
IEEE Electron Device Letters.  45 (2024)  7 - p. 1265-1268 , 2024
Link: https://doi.org/10.1109/..
 
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4

p-GaN gate power HEMT heterostructure as a versatile platfo..:

Ng, Yat Hon ; Zheng, Zheyang ; Zhang, Li...
Applied Physics Letters.  124 (2024)  4 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics.  39 (2024)  5 - p. 5614-5623 , 2024
Link: https://doi.org/10.1109/..
 
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6

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics.  39 (2024)  5 - p. 5558-5566 , 2024
Link: https://doi.org/10.1109/..
 
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7

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics.  39 (2024)  5 - p. 5567-5575 , 2024
Link: https://doi.org/10.1109/..
 
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8

Formation and Applications in Electronic Devices of Lattice..:

Chen, Junting ; Zhao, Junlei ; Feng, Sirui...
Advanced Materials.  35 (2023)  12 - p. , 2023
Link: https://doi.org/10.1002/..
 
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9

RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates:

Cheng, Yan ; Ng, Yat Hon ; Zheng, Zheyang.
IEEE Electron Device Letters.  44 (2023)  1 - p. 29-31 , 2023
Link: https://doi.org/10.1109/..
 
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10

Linearity Characterization of Enhancement- Mode p-GaN Gate ..:

Cheng, Yan ; Zheng, Zheyang ; Ng, Yat Hon.
IEEE Electron Device Letters.  44 (2023)  11 - p. 1813-1816 , 2023
Link: https://doi.org/10.1109/..
 
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11

An Actively-Passivated p-GaN Gate HEMT With Screening Effec..:

Wu, Yanlin ; Wei, Jin ; Wang, Maojun...
IEEE Electron Device Letters.  44 (2023)  1 - p. 25-28 , 2023
Link: https://doi.org/10.1109/..
 
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12

Electroluminescence and Gate Carrier Dynamics in a Schottky..:

Feng, Sirui ; Liao, Hang ; Chen, Tao...
IEEE Electron Device Letters.  44 (2023)  10 - p. 1592-1595 , 2023
Link: https://doi.org/10.1109/..
 
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13

Gate Characteristics of Enhancement-Mode Fully Depleted p-G..:

Sun, Jiahui ; Mouhoubi, Samir ; Silvestri, Marco...
IEEE Electron Device Letters.  44 (2023)  12 - p. 2015-2018 , 2023
Link: https://doi.org/10.1109/..
 
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14

Distribution and transport of holes in the p-GaN/AlGaN/GaN ..:

Ng, Yat Hon ; Zheng, Zheyang ; Zhang, Li...
Applied Physics Letters.  123 (2023)  14 - p. , 2023
Link: https://doi.org/10.1063/..
 
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15

Formation and Applications in Electronic Devices of Lattice..:

Chen, Junting ; Zhao, Junlei ; Feng, Sirui...
Advanced Materials.  35 (2023)  12 - p. , 2023
Link: https://doi.org/10.1002/..
 
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