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Rideau, D.
319
results:
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french (33)
english (271)
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?
1
Prediction of the evolution of defects induced by the heate..:
Julliard, P.L.
;
Johnsson, A.
;
Zographos, N.
...
Solid-State Electronics. 200 (2023) - p. 108521 , 2023
Link:
https://doi.org/10.1016/..
?
2
Avalanche breakdown and quenching in Ge SPAD using 3D Monte..:
Dollfus, P.
;
Saint-Martin, J.
;
Cazimajou, T.
...
Solid-State Electronics. 194 (2022) - p. 108361 , 2022
Link:
https://doi.org/10.1016/..
?
3
4 The novel p.Cys1410* mutation causes severe neonatal CF i..:
Mekki, C.
;
Mirlesse, V.
;
Le Floch, A.
...
Journal of Cystic Fibrosis. 16 (2017) - p. S63-S64 , 2017
Link:
https://doi.org/10.1016/..
?
4
Modeled optical properties of SiGe and Si layers compared t..:
Kriso, C.
;
Triozon, F.
;
Delerue, C.
...
Solid-State Electronics. 129 (2017) - p. 93-96 , 2017
Link:
https://doi.org/10.1016/..
?
5
How to assess hemodynamic status in very preterm newborns i..:
Escourrou, G
;
Renesme, L
;
Zana, E
...
Journal of Perinatology. 37 (2017) 9 - p. 987-993 , 2017
Link:
https://doi.org/10.1038/..
?
6
Reliable gate stack and substrate parameter extraction base..:
Mohamad, B.
;
Leroux, C.
;
Rideau, D.
...
Solid-State Electronics. 128 (2017) - p. 10-16 , 2017
Link:
https://doi.org/10.1016/..
?
7
Remote surface roughness scattering in fully depleted silic..:
Niquet, Y. M.
;
Duchemin, I.
;
Nguyen, V.-H.
..
Applied Physics Letters. 106 (2015) 2 - p. , 2015
Link:
https://doi.org/10.1063/..
?
8
Unexpected impact of germanium content in SiGe bulk PMOSFET:
Diouf, C.
;
Cros, A.
;
Soussou, A.
...
Solid-State Electronics. 86 (2013) - p. 45-50 , 2013
Link:
https://doi.org/10.1016/..
?
9
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devic..:
Nier, O.
;
Rideau, D.
;
Niquet, Y. M.
...
Journal of Computational Electronics. 12 (2013) 4 - p. 675-684 , 2013
Link:
https://doi.org/10.1007/..
?
10
Understanding Ge impact on VT and VFB in Si1−xGex/Si pMOSFE..:
Soussou, A.
;
Leroux, C.
;
Rideau, D.
...
Microelectronic Engineering. 109 (2013) - p. 282-285 , 2013
Link:
https://doi.org/10.1016/..
?
11
Microscopic scale characterization and modeling of transist..:
Mamy Randriamihaja, Yoann
;
Huard, V.
;
Federspiel, X.
...
Microelectronics Reliability. 52 (2012) 11 - p. 2513-2520 , 2012
Link:
https://doi.org/10.1016/..
?
12
Prise en charge des crises du nouveau-né:
Roubertie, A.
;
Masson, F.
;
de Villepin-Touzery, A.
...
Archives de Pédiatrie. 18 (2011) - p. S56-S64 , 2011
Link:
https://doi.org/10.1016/..
?
13
Characterization and 3D TCAD simulation of NOR-type flash n..:
Zaka, A.
;
Singer, J.
;
Dornel, E.
...
Solid-State Electronics. 63 (2011) 1 - p. 158-162 , 2011
Link:
https://doi.org/10.1016/..
?
14
SiGe:C HBT transit time analysis based on hydrodynamic mode..:
Ramirez-Garcia, E.
;
Michaillat, M.
;
Aniel, F.
...
Solid-State Electronics. 61 (2011) 1 - p. 58-64 , 2011
Link:
https://doi.org/10.1016/..
?
15
Full-Band Monte Carlo investigation of hole mobilities in S..:
Michaillat, M.
;
Rideau, D.
;
Aniel, F.
..
Thin Solid Films. 518 (2010) 9 - p. 2437-2441 , 2010
Link:
https://doi.org/10.1016/..
1-15