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Bollaert, S.
89
results:
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english (82)
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Sorted by: Relevance
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?
1
75 nm gate length PHEMT with f max = 800 GHz using asymmetr..:
Samnouni, M
;
Wichmann, Nicolas
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2021.3098255. , 2021
Link:
https://hal.science/hal-..
?
2
75 nm gate length PHEMT with f max = 800 GHz using asymmetr..:
Samnouni, M
;
Wichmann, Nicolas
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2021.3098255. , 2021
Link:
https://hal.science/hal-..
?
3
75 nm gate length PHEMT with f max = 800 GHz using asymmetr..:
Samnouni, M
;
Wichmann, Nicolas
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2021.3098255. , 2021
Link:
https://hal.science/hal-..
?
4
75 nm gate length PHEMT with f max = 800 GHz using asymmetr..:
Samnouni, M
;
Wichmann, N
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2021.3098255. , 2021
Link:
https://hal.archives-ouv..
?
5
f max =800 GHz with 75 nm gate length and asymmetric gate r..:
Samnouni, M
;
Wichmann, Nicolas
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2019.8873821. , 2019
Link:
https://hal.science/hal-..
?
6
Investigation of the UTB-InAs-MOSFETs structure:
Ammi, Sofiane
;
Aissat, Abdelkader
;
Wichmann, Nicolas
.
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mssp.2019.02.025. , 2019
Link:
https://hal.science/hal-..
?
7
Investigation of the UTB-InAs-MOSFETs structure:
Ammi, Sofiane
;
Aissat, Abdelkader
;
Wichmann, Nicolas
.
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mssp.2019.02.025. , 2019
Link:
https://hal.science/hal-..
?
8
f max =800 GHz with 75 nm gate length and asymmetric gate r..:
Samnouni, M
;
Wichmann, Nicolas
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2019.8873821. , 2019
Link:
https://hal.science/hal-..
?
9
f max =800 GHz with 75 nm gate length and asymmetric gate r..:
Samnouni, M
;
Wichmann, Nicolas
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2019.8873821. , 2019
Link:
https://hal.science/hal-..
?
10
f max =800 GHz with 75 nm gate length and asymmetric gate r..:
Samnouni, M
;
Wichmann, N
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2019.8873821. , 2019
Link:
https://hal.archives-ouv..
?
11
Impact ionization and band-to-band tunneling in In x Ga 1-x..:
Vasallo, B
;
Gonzalez, T
;
Talbo, V
...
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5007858. , 2018
Link:
https://hal.science/hal-..
?
12
Impact ionization and band-to-band tunneling in In x Ga 1-x..:
Vasallo, B
;
Gonzalez, T
;
Talbo, V
...
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5007858. , 2018
Link:
https://hal.science/hal-..
?
13
Impact ionization and band-to-band tunneling in In x Ga 1-x..:
Vasallo, B
;
Gonzalez, T
;
Talbo, V
...
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5007858. , 2018
Link:
https://hal.science/hal-..
?
14
Impact ionization and band-to-band tunneling in In x Ga 1-x..:
Vasallo, B
;
Gonzalez, T
;
Talbo, V
...
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5007858. , 2018
Link:
https://hal.science/hal-..
?
15
Impact of oxygen plasma postoxidation process on Al2O 3 / n..:
Lechaux, Y
;
Fadjie-Djomkam, A
;
Bollaert, S
.
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4963656. , 2016
Link:
https://hal.science/hal-..
1-15
