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Deng, Gaoqiang
30
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1
Realization of p-type conduction in compositionally graded ..:
Zhao, Chunlei
;
Deng, Gaoqiang
;
Zhang, Lidong
...
https://linkinghub.elsevier.com/retrieve/pii/S277301232200190X. , 2022
Link:
http://hdl.handle.net/10..
?
2
Ga-free AlInN films growth by close-coupled showerhead meta..:
Deng, Gaoqiang
;
Zhang, Lidong
;
Wang, Yang
...
https://linkinghub.elsevier.com/retrieve/pii/S2773012322000048. , 2022
Link:
http://hdl.handle.net/10..
?
3
Demonstration of epitaxial growth of strain-relaxed GaN fil..:
Yu, Ye
;
Wang, Tao
;
Chen, Xiufang
...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8175549/. , 2021
Link:
http://www.ncbi.nlm.nih...
?
4
Effects of Oxygen Flow Rates on the Physical Characteristic..:
Yang, Feifan
;
Fan, Yibang
;
Li, Jingjie
...
10.1590/1980-5373-mr-2020-0275. , 2020
Link:
http://www.scielo.br/sci..
?
5
1.2‐kV silicon carbide planar split‐gate MOSFET with source..:
Hengyu Yu
;
Jun Wang
;
Shiwei Liang
...
https://doi.org/10.1049/pel2.12321. , 2022
Link:
https://doi.org/10.1049/..
?
6
Demonstration of epitaxial growth of strain-relaxed GaN fil..:
Ye Yu
;
Tao Wang
;
Xiufang Chen
...
https://doi.org/10.1038/s41377-021-00560-3. , 2021
Link:
https://doi.org/10.1038/..
?
7
High-resistivity nitrogen-polar GaN for GaN/AlGaN high elec..:
Yang Wang
;
Gaoqiang Deng
;
Jie Ji
...
http://dx.doi.org/10.1063/5.0063784. , 2021
Link:
https://doi.org/10.1063/..
?
8
Demonstration of N-Polar III-Nitride Tunnel Junction LED:
Yuantao Zhang
;
Gaoqiang Deng
;
Ye Yu
...
ACS PHOTONICS. , 2020
Link:
http://ir.semi.ac.cn/han..
?
9
Effects of Oxygen Flow Rates on the Physical Characteristic..:
Feifan Yang
;
Yibang Fan
;
Jingjie Li
...
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000600201&tlng=en. , 2020
Link:
https://doi.org/10.1590/..
?
10
Design and fabrication of double AlGaN/GaN distributed Brag..:
Gaoqiang Deng
;
Yuantao Zhang
;
Pengchong Li
...
Journal of Materials Science: Materials in Electronics. , 2019
Link:
http://ir.semi.ac.cn/han..
?
11
Significantly reduced in-plane tensile stress of GaN films ..:
Gaoqiang Deng
;
Yuantao Zhang
;
Ye Yu
...
SUPERLATTICES AND MICROSTRUCTURES. , 2018
Link:
http://ir.semi.ac.cn/han..
?
12
Significantly improved surface morphology of N-polar GaN fi..:
Gaoqiang Deng
;
Yuantao Zhang
;
Ye Yu
...
APPLIED PHYSICS LETTERS. , 2018
Link:
http://ir.semi.ac.cn/han..
?
13
Growth of AlGaN-based multiple quantum wells on SiC substra..:
Xu Han
;
Yuantao Zhang
;
Pengchong Li
...
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. , 2018
Link:
http://ir.semi.ac.cn/han..
?
14
Study on the structural, optical, and electrical properties..:
Gaoqiang Deng
;
Yuantao Zhang
;
Ye Yu
...
Superlattices and Microstructures. , 2018
Link:
http://ir.semi.ac.cn/han..
?
15
The growth optimization and mechanism of N-polar GaN films ..:
Gaoqiang Deng
;
Yuantao Zhang
;
Zhen Huang
...
CrystEngComm. , 2017
Link:
http://ir.semi.ac.cn/han..
1-15