van der Wiel, Wilfred G.
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1

Toward a formal theory for computing machines made out of w..:

Jaeger, Herbert ; Noheda, Beatriz ; van der Wiel, Wilfred G
https://research.rug.nl/en/publications/cb1966f8-ba0b-4616-913d-479e97d6e715.  , 2023
 
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Hard superconducting gap and diffusion-induced superconduct..:

Ridderbos, Joost ; Brauns, Matthias ; de Vries, Folkert K...
Ridderbos , J , Brauns , M , de Vries , F K , Shen , J , Li , A , Kölling , S , Verheijen , M A , Brinkman , A , van der Wiel , W G , Bakkers , E P A M & Zwanenburg , F A 2020 , ' Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires ' , Nano Letters , vol. 20 , no. 1 , pp. 122-130 . https://doi.org/10.1021/acs.nanolett.9b03438.  , 2020
 
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Classification with a disordered dopant-atom network in sil..:

Chen, Tao ; van Gelder, Jeroen ; van de Ven, Bram...
Chen , T , van Gelder , J , van de Ven , B , Amitonov , S V , de Wilde , B , Ruiz Euler , H C , Broersma , H , Bobbert , P A , Zwanenburg , F A & van der Wiel , W G 2020 , ' Classification with a disordered dopant-atom network in silicon ' , Nature , vol. 577 , no. 7790 , pp. 341-345 . https://doi.org/10.1038/s41586-019-1901-0.  , 2020
 
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9

A deep-learning approach to realizing functionality in nano..:

Ruiz Euler, Hans Christian ; Boon, Marcus N ; Wildeboer, Jochem T...
Ruiz Euler , H C , Boon , M N , Wildeboer , J T , van de Ven , B , Chen , T , Broersma , H , Bobbert , P A & van der Wiel , W G 2020 , ' A deep-learning approach to realizing functionality in nanoelectronic devices ' , Nature Nanotechnology , vol. 15 , no. 12 , pp. 992-998 . https://doi.org/10.1038/s41565-020-00779-y.  , 2020
 
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14

Multiple Andreev reflections and Shapiro steps in a Ge-Si n..:

Ridderbos, Joost ; Brauns, Matthias ; Li, Ang...
Ridderbos , J , Brauns , M , Li , A , Bakkers , E P A M , Brinkman , A , van der Wiel , W G & Zwanenburg , F A 2019 , ' Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction ' , Physical Review Materials , vol. 3 , no. 8 , 084803 . https://doi.org/10.1103/PhysRevMaterials.3.084803.  , 2019
 
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